Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors

2006 ◽  
Vol 50 (3) ◽  
pp. 480-488
Author(s):  
Bo Zhang ◽  
Wanjun Chen ◽  
Kun Yi ◽  
Zhaoji Li
Keyword(s):  
Minority Carrier ◽  
Current Gain ◽  
Power Transistors ◽  
Base Electrode

Simple method for increasing current gain and voltage ratings of power transistors

1987 ◽  
Vol 23 (23) ◽  
pp. 1213
Author(s):  
A. Silard ◽  
F. Floru ◽  
C. Stefan ◽  
G. Nani
Keyword(s):  
Current Gain ◽  
Simple Method ◽  
Power Transistors

Factors limiting current gain in power transistors

1977 ◽  
Vol 24 (10) ◽  
pp. 1255-1259 ◽  
Author(s):  
E.J. McGrath ◽  
D.H. Navon
Keyword(s):  
Limiting Current ◽  
Current Gain ◽  
Power Transistors

Vertical Bipolar Transistors and a Merged 3–D Vertical Bipolar—Mos Device in Recrystallized Polysilicon

1985 ◽  
Vol 53 ◽  
Author(s):  
J.C. Sturm ◽  
J.F. Gibbons
Keyword(s):  
Minority Carrier ◽  
Strong Dependence ◽  
Three Dimensional ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Collector Current ◽  
Beam Laser ◽  
P Type ◽  
Mos Device

ABSTRACTThe minority carrier properties of shaped—beam laser-recrystallized polysilicon films have been studied, leading to the successful fabrication of vertical bipolar transistors in these films and to the demonstration of a novel three—dimensional mergedvertical bipolar—MOS device. Experiments with lateral transistors established a minority carrier diffusion length of 4 μm in p—type recrystallized films. Vertical bipolar npn transistors with a base—width of 0.2 μm were fabricated in 0.75–μm—thick films using a polysilicon emitter technology. The strong dependence of the gain of the transistors on hydrogen annealing steps is described. With an Ar:H plasma anneal to decrease base—emitter space—charge region recombination, a common—emitter current gain of 100 was possible. The bipolar transistor technology was then used to develop a 3—D fourterminal merged verticalbipolar—MOS device in a recrystallized film. It consists of the three terminals of a bipolar transistor plus a fourth underlying terminal which serves to switch the collector current on or off. A simple model for the device is presented.

Forward Active and Blocking Performance of 4H-SiC Bipolar Junction Transistors

2005 ◽  
Vol 888 ◽  
Author(s):  
Santhosh Balachandran ◽  
T. Paul Chow ◽  
Anant Agarwal
Keyword(s):  
High Voltage ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Current Gain ◽  
Surface Recombination Velocity ◽  
Bipolar Junction Transistors ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Recombination Velocity ◽  
The Impact

ABSTRACTWe evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific on-resistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined. A correlation between the open base blocking behavior (forward blocking) and the current gain (forward active) for 4H-SiC based high-voltage BJTs with lightly doped collector regions is presented and experimental device characteristics are utilized to verify our numerical analysis.

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