Diffusion induced dislocation glide

1983 ◽  
Vol 17 (10) ◽  
pp. 1231-1235 ◽  
Author(s):  
P.G. Shewmon ◽  
G. Meyrick ◽  
S. Mishra ◽  
T.A. Parthasarathy
Keyword(s):  
Dislocation Glide ◽  
Induced Dislocation

Effect of Interface Conditions on Yield Behavior of Passivated Copper Thin Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1863-1870 ◽  
Author(s):  
Richard P. Vinci ◽  
Stefanie A. Forrest ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
Driving Force ◽  
Copper Film ◽  
Dislocation Motion ◽  
Yield Behavior ◽  
Dislocation Glide ◽  
Preferential Diffusion ◽  
Continuous Vacuum ◽  
And Diffusion ◽  
Induced Dislocation

Wafer curvature was used to study the thermal–mechanical behavior of 1-μm Cu thin films capped with a 100-nm-thick Si3N4 layer. These films were grown with either a Ta or a Si3N4 underlayer. Films on Si3N4 that were exposed to oxygen at the film/capping layer interface or at the center of the copper layer exhibited Bauschinger-like yielding at low stress. Stacks deposited under continuous vacuum, with a Ta underlayer, with carbon exposure at the upper surface of the copper film, or with oxygen exposure of only the underlayer did not demonstrate the anomalous yielding. Preferential diffusion of oxygen into copper grain boundaries or interfaces is the likely cause of the early yield behavior. Possible mechanisms include an increase in interface adhesion due to the presence of oxygen in solution and diffusion-induced dislocation glide as an additional driving force for dislocation motion at low applied stress.

Electronically induced dislocation glide motion in hexagonal GaN single crystals

1999 ◽  
Vol 273-274 ◽  
pp. 134-139 ◽  
Author(s):  
Koji Maeda ◽  
Kunio Suzuki ◽  
Masaki Ichihara ◽  
Satoshi Nishiguchi ◽  
Kana Ono ◽  
...  
Keyword(s):  
Single Crystals ◽  
Dislocation Glide ◽  
Induced Dislocation

scholarly journals In-situ TEM irradiation creep experiment revealing radiation induced dislocation glide in pure copper

2021 ◽  
pp. 117096
Author(s):  
Nargisse Khiara ◽  
Fabien Onimus ◽  
Stéphanie Jublot-Leclerc ◽  
Thomas Jourdan ◽  
Thomas Pardoen ◽  
...  
Keyword(s):  
Pure Copper ◽  
In Situ Tem ◽  
Irradiation Creep ◽  
Creep Experiment ◽  
Dislocation Glide ◽  
Radiation Induced ◽  
Induced Dislocation

Structure of stacking faults in pyrite using TEM techniques

1992 ◽  
Vol 50 (1) ◽  
pp. 358-359
Author(s):  
Raja Subramanian ◽  
Kenneth S. Vecchio
Keyword(s):  
Lattice Structure ◽  
Stacking Faults ◽  
Covalent Bond ◽  
Group Symmetry ◽  
Iron Pyrite ◽  
Dislocation Glide ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Chlorine Ions

The structure of stacking faults and partial dislocations in iron pyrite (FeS2) have been studied using transmission electron microscopy. Pyrite has the NaCl structure in which the sodium ions are replaced by iron and chlorine ions by covalently-bonded pairs of sulfur ions. These sulfur pairs are oriented along the <111> direction. This covalent bond between sulfur atoms is the strongest bond in pyrite with Pa3 space group symmetry. These sulfur pairs are believed to move as a whole during dislocation glide. The lattice structure across these stacking faults is of interest as the presence of these stacking faults has been preliminarily linked to a higher sulfur reactivity in pyrite. Conventional TEM contrast analysis and high resolution lattice imaging of the faulted area in the TEM specimen has been carried out.

THE STUDY OF DISLOCATION GLIDE IN ICE BY SYNCHROTRON RADIATION X-RAY TOPOGRAPHY

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-175-C1-181
Author(s):  
S. AHMAD ◽  
M. OHTOMO ◽  
R. W. WHITWORTH
Keyword(s):  
Synchrotron Radiation ◽  
X Ray ◽  
Dislocation Glide

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

2020 ◽  
Vol 4 (7) ◽  
Author(s):  
Jie Zhang ◽  
Xuelin Yang ◽  
Yuxia Feng ◽  
Yue Li ◽  
Maojun Wang ◽  
...  
Keyword(s):  
Si Substrates ◽  
Induced Dislocation

On the mechanism of cross-slip induced dislocation substructure formation in an high-Mn steel

Materialia ◽  
2021 ◽  
pp. 101042
Author(s):  
S.R. Das ◽  
S. Shyamal ◽  
T. Sahu ◽  
J.I. Kömi ◽  
P.C. Chakraborti ◽  
...  
Keyword(s):  
Dislocation Substructure ◽  
Cross Slip ◽  
Substructure Formation ◽  
Mn Steel ◽  
Induced Dislocation

Influence of Hole Size on Crack Propagation Mechanism of Nano-Single Crystal Copper

2013 ◽  
Vol 328 ◽  
pp. 679-683
Author(s):  
Ge Li ◽  
Xian Qin Hou ◽  
Zhi Min Liu
Keyword(s):  
Molecular Dynamics ◽  
Crack Propagation ◽  
Hole Diameter ◽  
Propagation Mechanism ◽  
Hole Size ◽  
Single Crystal Copper ◽  
Dislocation Glide ◽  
Hole Position ◽  
Crack Propagation Mechanism ◽  
Dynamics Method

By molecular dynamics method, the tensile processes of nanosingle crystal copper with the crack front existence hole were simulated, and the effect of different hole size on crack propagation mechanism was analyzed. The results indicate that as the hole position remain unchanged, the hole diameter was more bigger, the atomic staggered and the crack tip deactivation were more obvious under tensile loads caused more dislocation glide appeared, meanwhile the number of slide-line was more and the trend of crack branch extend to hole position was more obvious.

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