Positive microwave dielectric constant of metallic one-dimensional conductors

1978 ◽  
Vol 25 (12) ◽  
pp. 981-985 ◽  
Author(s):  
W.J. Gunning ◽  
A.J. Heeger ◽  
I.F. Shchegolev ◽  
S.P. Zolotukhin
2011 ◽  
Vol 326 ◽  
pp. 127-130
Author(s):  
Xian Li Huang ◽  
Fu Ping Wang ◽  
Ying Song

In the present work, the microstructure and microwave dielectric properties of BaTi4O9 ceramics derived from a sol-gel precursor were presented. Density measuring results demonstrated that the largest densities of ceramic sample about 96.7% could be reached by virtue of a cool iso-static press and a sintering process at at 1300 °C for 6 hours. The dielectric constant (εr), quality factor (Q×f) and the temperature coefficients (τf) of the BaTi4O9 ceramic samples were 36.65, 28000 GHz, +20.2 ppm/°C, respectively. XRD, SEM and XPS were used to characterize the microstructure of the ceramics samples. Substantial Ti3+ was proposed to be the cause of dielectric loss.


2014 ◽  
Vol 787 ◽  
pp. 338-341
Author(s):  
Cheng Hsing Hsu ◽  
Chia Hao Chang ◽  
Wen Shiush Chen ◽  
Jenn Sen Lin ◽  
Chun Hung Lai

Microwave dielectric properties and microstructures of (Ca0.8Sr0.2)ZrO3 ceramics prepared by the conventional solid-state route have been studied. The values of the dielectric constant (εr) were 22-26. The Q×f values of 10400–11500 GHz were obtained when the sintering temperatures were in the range of 1400–1490°C. The temperature coefficient of the resonant frequency τf was not sensitive to the sintering temperature. The εr value of 26, the Q×f value of 11500 GHz, and the τf value of-9 ppm/°C were obtained for (Ca0.8Sr0.2)ZrO3 ceramics sintering at 1490°C. The ceramic, (Ca0.8Sr0.2)ZrO3 is proposed as a suitable candidate material for application in highly selective microwave ceramic passive components.


2015 ◽  
Vol 1087 ◽  
pp. 50-54 ◽  
Author(s):  
Mohamad Johari Abu ◽  
Julie Juliewatty Mohamed ◽  
Mohd Fadzil Ain ◽  
Zainal Arifin Ahmad

CaCu(3+x)Ti4O12 (CCTO) ceramics with different Cu-excess (x = 0 – 0.6) were prepared by conventional solid-state reaction method. Characterization of the prepared ceramics with XRD and FESEM showed that lattice parameter and grain size are slightly increased, indicating Cu-excess to have the big impact on the both phase structure and microstructure. The XRD profiles indicated that the secondary phase (CuO or Cu2O) existed at edge/corner of CCTO grain, which promoted inhibited grain growth behavior. The CCTO ceramics exhibited two trends of dielectric constant related to frequency, which showed a flatter curve about ~50 in 1 – 25 GHz regions, and it’s dropped rapidly to ~35 in 25 – 50 GHz region. With Cu-excess, the dielectric constant of the ceramics was increased for an average of a quarter-order of magnitude, while the tangent loss also increased up to triple times than x = 0, for the same frequency range. Despite enormous increase of dielectric constant related to varying Cu-excess, the tangent loss also increased.


1982 ◽  
Vol 43 (7) ◽  
pp. 507-510 ◽  
Author(s):  
A. Jànossy ◽  
K. Holczer ◽  
P.L. Hsieh ◽  
C.M. Jackson ◽  
A. Zettl

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