Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

Solid-State Electronics ◽

10.1016/0038-1101(69)90119-1 ◽

1969 ◽

Vol 12 (2) ◽

pp. 111-116 ◽

Author(s):

H. Statz ◽

W.v. Münch

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

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Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

Microelectronics Reliability ◽

10.1016/0026-2714(69)90360-6 ◽

1969 ◽

Vol 8 (4) ◽

pp. 297

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

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Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l883 ◽

1996 ◽

Vol 35 (Part 2, No. 7B) ◽

pp. L883-L886 ◽

Author(s):

Tamotsu Kimura ◽

Ryoji Shigemasa ◽

Tomoyuki Ohshima ◽

Seiji Nishi

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Barrier Height ◽

Threshold Voltage ◽

Field Effect ◽

Schottky Barrier Height ◽

Field Effect Transistors ◽

Gate Current ◽

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High-speed gallium-arsenide Schottky-barrier field-effect transistors

Electronics Letters ◽

10.1049/el:19700159 ◽

1970 ◽

Vol 6 (8) ◽

pp. 228 ◽

Author(s):

K.E. Drangeid ◽

R. Sommerhalder ◽

W. Walter

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

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Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors

10.1063/1.4848320 ◽

2013 ◽

Author(s):

V. A. Sydoruk ◽

M. V. Petrychuk ◽

A. Ural ◽

G. Bosman ◽

A. Offenhäusser ◽

...

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Low Noise ◽

Transport Regime ◽

Channel Transport

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Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00144 ◽

2017 ◽

Vol 9 (13) ◽

pp. 12046-12053 ◽

Author(s):

Jorge L. Barreda ◽

Timothy D. Keiper ◽

Mei Zhang ◽

Peng Xiong

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire

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Gallium arsenide traveling-wave field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.21910 ◽

1985 ◽

Vol 32 (1) ◽

pp. 61-66 ◽

Author(s):

A.J. Holden ◽

D.R. Daniel ◽

I. Davies ◽

C.H. Oxley ◽

H.D. Rees

Keyword(s):

Gallium Arsenide ◽

Traveling Wave ◽

Field Effect ◽

Field Effect Transistors

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Electrostatics of coaxial schottky-barrier nanotube field-effect transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2003.817228 ◽

2003 ◽

Vol 2 (3) ◽

pp. 175-180 ◽

Author(s):

D.L. John ◽

L.C. Castro ◽

J. Clifford ◽

D.L. Pulfrey

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

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The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106279 ◽

2022 ◽

Vol 138 ◽

pp. 106279

Author(s):

Wei Li ◽

Jinlei Wei ◽

Wen Chen ◽

Sicheng Jing ◽

Jinghua Pan ◽

...

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorous

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Suppression of short channel effects in 5.1 nm WTe2 in-plane Schottky barrier field-effect transistors by Mo-doping

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106327 ◽

2021 ◽

pp. 106327

Author(s):

Liuming Dou ◽

Zhiqiang Fan ◽

Peng Xiao

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Short Channel ◽

Mo Doping ◽

Channel Effects

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4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses

10.1109/essderc53440.2021.9631818 ◽

2021 ◽

Author(s):

Fengben Xi ◽

Yi Han ◽

Andreas Tiedemann ◽

Detlev Grutzmacher ◽

Qing-Tai Zhao

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

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