High-speed gallium-arsenide Schottky-barrier field-effect transistors

1970 ◽  
Vol 6 (8) ◽  
pp. 228 ◽  
Author(s):  
K.E. Drangeid ◽  
R. Sommerhalder ◽  
W. Walter
Keyword(s):  
Gallium Arsenide ◽  
Schottky Barrier ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

Gallium arsenide traveling-wave field-effect transistors

1985 ◽  
Vol 32 (1) ◽  
pp. 61-66 ◽  
Author(s):  
A.J. Holden ◽  
D.R. Daniel ◽  
I. Davies ◽  
C.H. Oxley ◽  
H.D. Rees
Keyword(s):  
Gallium Arsenide ◽  
Wave Field ◽  
Traveling Wave ◽  
Field Effect ◽  
Field Effect Transistors

Electrostatics of coaxial schottky-barrier nanotube field-effect transistors

2003 ◽  
Vol 2 (3) ◽  
pp. 175-180 ◽  
Author(s):  
D.L. John ◽  
L.C. Castro ◽  
J. Clifford ◽  
D.L. Pulfrey
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors
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