Power law reverse current-voltage characteristic in Schottky barriers

1974 ◽  
Vol 17 (10) ◽  
pp. 1083-1086 ◽  
Author(s):  
Jules D. Levine
Author(s):  
О.О. Маматкаримов ◽  
О. Химматкулов ◽  
И.Г. Турсунов

Abstract The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb– p -Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.


Author(s):  
Alexander A. Logachev ◽  
Irina N. Poluyanova ◽  
Konstantin K. Zabello ◽  
Sergey M. Shkol'nik

2004 ◽  
Vol 30 (9) ◽  
pp. 736-738
Author(s):  
I. K. Kamilov ◽  
K. M. Aliev ◽  
Kh. O. Ibragimov ◽  
N. S. Abakarova

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