High temperature thermal stability of plasma-deposited tungsten nitride Schottky contacts to GaAs

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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High-Temperature Oxidation Resistance and Thermal Stability of Higher Manganese Silicide Powder Synthesized by Pack Cementation

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.159842 ◽

2021 ◽

pp. 159842

Author(s):

Aikaterini Teknetzi ◽

Evangelia Tarani ◽

Dimitrios Stathokostopoulos ◽

Dimitrios Karfaridis ◽

Konstantinos Chrissafis ◽

...

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Oxidation Resistance ◽

High Temperature Oxidation ◽

Pack Cementation ◽

Higher Manganese Silicide ◽

Temperature Oxidation ◽

Manganese Silicide ◽

Thermal Stability Of

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Enhanced high-temperature performance and thermal stability of lithium-rich cathode via combining full concentration gradient design with surface spinel modification

Chemical Engineering Journal ◽

10.1016/j.cej.2021.129042 ◽

2021 ◽

Vol 415 ◽

pp. 129042

Author(s):

Naifang Hu ◽

Chi Zhang ◽

Kaifang Song ◽

Hui Wu ◽

Puheng Yang ◽

...

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Concentration Gradient ◽

Temperature Performance ◽

Thermal Stability Of

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Increased Thermal Stability of Co-silicide Using Co-Ta Alloy Films

MRS Proceedings ◽

10.1557/proc-670-k6.5 ◽

2001 ◽

Vol 670 ◽

Author(s):

Min-Joo Kim ◽

Hyo-Jick Choi ◽

Dae-Hong Ko ◽

Ja-Hum Ku ◽

Siyoung Choi ◽

...

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Grain Boundary ◽

Reaction Rate ◽

Boundary Migration ◽

Grain Boundary Migration ◽

Alloy Films ◽

Post Annealing ◽

Alloy Process ◽

Thermal Stability Of

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

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Thermal stability of nickel-cobalt multilayer silicide

MRS Proceedings ◽

10.1557/proc-0891-ee07-29 ◽

2005 ◽

Vol 891 ◽

Author(s):

Kil Jin Han ◽

Yu Jung Cho ◽

Soon Young Oh ◽

Yong Jin Kim ◽

Won Jae Lee ◽

...

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Depth Profile ◽

Ternary Phase ◽

Nickel Silicide ◽

Composition Gradient ◽

Cobalt Silicide ◽

Nickel Cobalt ◽

Thermal Stability Of ◽

Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

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