Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

2006 ◽  
Vol 321-323 ◽  
pp. 1322-1325
Author(s):  
Kil Jin Han ◽  
Yu Jeong Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  

We investigated the effect of SiOcap layer on the thermal stability of nickel and nickel-cobalt silicide by measuring its sheet resistance. The stability of nickel silicide was deteriorated as a function of annealing temperature, while that of nickel-cobalt silicide was not. In case of both silicides, the SiOcap layer improved the stability. Tensile stress from the difference of thermal expansion coefficients between SiO2 and nickel silicide may suppress the agglomeration of nickel silicide.


Author(s):  
Kil Jin Han ◽  
Yu Jeong Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  

2001 ◽  
Vol 670 ◽  
Author(s):  
Jer-shen Maa ◽  
Douglas J. Tweet ◽  
Yoshi Ono ◽  
Lisa Stecker ◽  
Sheng Teng Hsu

ABSTRACTThermal stability of nickel silicide is improved by adding a thin Co interlayer at Ni/Si interface. After high temperature anneal, the low sheet resistance of silicide and the low junction leakage of the ultra-shallow junction show the lack of film degradation. The transformation to disilicide phase occurred at a lower temperature. At 850°C, interface shows the truncated facet structure extended 100° to 200° below silicide/Si interface. With Co addition, nickel silicide formed on polysilicon and on SiGe films also show improved thermal stability and low sheet resistance. Formation temperature of disilicide phase occurred at lower temperature in all these cases.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


2021 ◽  
pp. 159842
Author(s):  
Aikaterini Teknetzi ◽  
Evangelia Tarani ◽  
Dimitrios Stathokostopoulos ◽  
Dimitrios Karfaridis ◽  
Konstantinos Chrissafis ◽  
...  

2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.


2006 ◽  
Vol 83 (2) ◽  
pp. 345-350 ◽  
Author(s):  
Wei Huang ◽  
Li-Chun Zhang ◽  
Yu-Zhi Gao ◽  
Han-Yan Jin

2004 ◽  
Vol 45 (5) ◽  
pp. 327-332 ◽  
Author(s):  
V. V. Kolomeitsev ◽  
S. A. Suvorov ◽  
E. F. Kolomeitseva

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