Surface and bulk impurity eigenvalues in the shallow donor impurity theory

1967 ◽  
Vol 7 (3) ◽  
pp. 293-301 ◽  
Author(s):  
Robert J. Bell ◽  
W.T. Bousman ◽  
G.M. Goldman ◽  
D.G. Rathbun
Keyword(s):  
1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu

1973 ◽  
Vol 34 (1) ◽  
pp. 108-118 ◽  
Author(s):  
Vidal Emmanuel Godwin ◽  
Wayne E. Tefft

1990 ◽  
Vol 13 (4) ◽  
pp. 557-562
Author(s):  
Shen Zhong-jun ◽  
Yuan Xiao-zhong ◽  
Gu Shi-wei

2010 ◽  
Vol 43 (1) ◽  
pp. 372-374 ◽  
Author(s):  
Chaojin Zhang ◽  
Zhanxin Wang ◽  
Ying Liu ◽  
Kangxian Guo

1993 ◽  
Vol 86 (6) ◽  
pp. 399-402 ◽  
Author(s):  
Zhen-Yan Deng ◽  
Xue-Lin Yang ◽  
Shi-Wei Gu
Keyword(s):  

1996 ◽  
Vol 54 (12) ◽  
pp. 8566-8573 ◽  
Author(s):  
P. W. Barmby ◽  
J. L. Dunn ◽  
C. A. Bates ◽  
T. O. Klaassen

2020 ◽  
Vol 330 ◽  
pp. 01012
Author(s):  
Walid Belaid ◽  
Haddou El Ghazi ◽  
Izeddine Zorkani ◽  
Anouar Jorio

In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.


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