Theory of shallow donor impurity near-surface states in Si and Ge

1973 ◽  
Vol 34 (1) ◽  
pp. 108-118 ◽  
Author(s):  
Vidal Emmanuel Godwin ◽  
Wayne E. Tefft
1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu

2002 ◽  
Vol 743 ◽  
Author(s):  
Hideki Hasegawa ◽  
Tamotsu Hashizume

ABSTRACTThis paper reviews the authors′ recent efforts to clarify the properties of electronic states near surfaces of GaN and AlGaN by using variousin-situandex-situcharacterization techniques, including UHV contact-less C-V, photoluminescence surface state spectroscopy (PLS3), cathode luminescence in-depth spectroscopy (CLIS),and gateless FET techniques that have been developed by the authors’ group.As a result, a model including a U-shaped surface state continuum, having a particular charge neutrality level, combined with frequent appearance of near-surface N-vacancy related deep donor states having a discrete level at Ec - 0.37eV is proposed as a unified model that can explain large gate leakage currents and current collapse in AlGaN/GaN HFETs. Hydrogen plasma treatment and SiO2deposition increase N-vacancy related deep donors. Reasonably good surface passivation can be achieved by ECR-plasma SiNx films and by ECR-plasma oxidized Al2O3films both combined with ECR N2plasma treatment.


1990 ◽  
Vol 13 (4) ◽  
pp. 557-562
Author(s):  
Shen Zhong-jun ◽  
Yuan Xiao-zhong ◽  
Gu Shi-wei

2010 ◽  
Vol 43 (1) ◽  
pp. 372-374 ◽  
Author(s):  
Chaojin Zhang ◽  
Zhanxin Wang ◽  
Ying Liu ◽  
Kangxian Guo

1967 ◽  
Vol 7 (3) ◽  
pp. 293-301 ◽  
Author(s):  
Robert J. Bell ◽  
W.T. Bousman ◽  
G.M. Goldman ◽  
D.G. Rathbun
Keyword(s):  

1993 ◽  
Vol 86 (6) ◽  
pp. 399-402 ◽  
Author(s):  
Zhen-Yan Deng ◽  
Xue-Lin Yang ◽  
Shi-Wei Gu
Keyword(s):  

1996 ◽  
Vol 54 (12) ◽  
pp. 8566-8573 ◽  
Author(s):  
P. W. Barmby ◽  
J. L. Dunn ◽  
C. A. Bates ◽  
T. O. Klaassen

2018 ◽  
Vol 99 (6) ◽  
pp. 1253-1272 ◽  
Author(s):  
Joseph A. Santanello ◽  
Paul A. Dirmeyer ◽  
Craig R. Ferguson ◽  
Kirsten L. Findell ◽  
Ahmed B. Tawfik ◽  
...  

AbstractLand–atmosphere (L-A) interactions are a main driver of Earth’s surface water and energy budgets; as such, they modulate near-surface climate, including clouds and precipitation, and can influence the persistence of extremes such as drought. Despite their importance, the representation of L-A interactions in weather and climate models remains poorly constrained, as they involve a complex set of processes that are difficult to observe in nature. In addition, a complete understanding of L-A processes requires interdisciplinary expertise and approaches that transcend traditional research paradigms and communities. To address these issues, the international Global Energy and Water Exchanges project (GEWEX) Global Land–Atmosphere System Study (GLASS) panel has supported “L-A coupling” as one of its core themes for well over a decade. Under this initiative, several successful land surface and global climate modeling projects have identified hot spots of L-A coupling and helped quantify the role of land surface states in weather and climate predictability. GLASS formed the Local Land–Atmosphere Coupling (LoCo) project and working group to examine L-A interactions at the process level, focusing on understanding and quantifying these processes in nature and evaluating them in models. LoCo has produced an array of L-A coupling metrics for different applications and scales and has motivated a growing number of young scientists from around the world. This article provides an overview of the LoCo effort, including metric and model applications, along with scientific and programmatic developments and challenges.


1990 ◽  
Vol 41 (18) ◽  
pp. 12945-12948 ◽  
Author(s):  
J. M. Moison ◽  
K. Elcess ◽  
F. Houzay ◽  
J. Y. Marzin ◽  
J. M. Gérard ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document