Thin-film growth-mode analysis by low energy ion scattering

1996 ◽  
Vol 363 (1-3) ◽  
pp. 161-165 ◽  
Author(s):  
Yasunori Tanaka ◽  
Hideki Morishita ◽  
Jeong Tak Ryu ◽  
Itsuo Katayama ◽  
Kenjiro Oura
2015 ◽  
Vol 33 (1) ◽  
pp. 01A122 ◽  
Author(s):  
Philipp Brüner ◽  
Thomas Grehl ◽  
Hidde Brongersma ◽  
Blanka Detlefs ◽  
Emmanuel Nolot ◽  
...  

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.


1991 ◽  
Vol 237 ◽  
Author(s):  
F. ShojiK ◽  
K. Sumitomo ◽  
T. Kinoshita ◽  
Y. Tanaka ◽  
K. Oura ◽  
...  

ABSTRACTThe effects of hydrogen adsorption on the growth process and structures of Ag thin films on Si(111)-7×7 surfaces has been studied. The growth process and film structures are investigated by low energy electron diffraction(LEED) and low energy ion scattering spectroscopy of time of flight mode(TOF-ICISS). The hydrogen adsorbed on the surface is investigated by low energy recoil detection analysis(TOF-ERDA). We have found that Ag thin films deposited onto hydrogen covered Si(111) surfaces grow with a mode definitely different from that on clean surfaces.


2001 ◽  
Vol 72 (3) ◽  
pp. 1755 ◽  
Author(s):  
M. Lippmaa ◽  
T. Furumochi ◽  
S. Ohashi ◽  
M. Kawasaki ◽  
H. Koinuma ◽  
...  

1987 ◽  
Vol 103 ◽  
Author(s):  
R. W. Vook

ABSTRACTA review of the experimental and theoretical results describing thin film growth modes is presented. Thermodynamic criteria for determining which growth mode might be expected to occur in a particular case along with some kinetic considerations are given. The characteristics of each of the three principal growth modes, namely Frank and van der Merwe (layer), Stranski-Krastanov (layer plus island), and Volmer-Weber (island), are discussed. Lastly, the requirements favoring the growth of epitaxial multilayers are briefly considered.


1999 ◽  
Vol 06 (05) ◽  
pp. 775-780 ◽  
Author(s):  
Y. W. KIM ◽  
G. A. WHITE ◽  
N. R. SHIVAPARAN ◽  
M. A. TETER ◽  
R. J. SMITH

The structure of thin Ti films grown on Al(111) surfaces at room temperature has been studied using high energy ion scattering/channeling (HEIS), X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), low energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD). Our results show that Ti grows in the SK mode on the Al(111) surface. Ti atoms form a two-dimensional overlayer up to a deposition of about 2 ML Ti, followed by three-dimensional island growth with additional Ti deposition. The Ti islands cover the surface completely at about 12 ML of Ti deposition. XPD results show that the Ti overlayer has a well-ordered hcp Ti(0001) structure on the fcc Al(111) surface, in remarkable contrast to the fcc Ti film growth observed on Al(001) and Al(110) surfaces.


Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 724-728
Author(s):  
Shinji NAGAMACHI ◽  
Masahiro UEDA ◽  
Junzo ISHIKAWA

Sign in / Sign up

Export Citation Format

Share Document