Temperature dependence of the electrical conduction in discontinuos silver films on sapphire substrates

1987 ◽  
Vol 148 (3) ◽  
pp. 233-241 ◽  
Author(s):  
B. Barwiński
Keyword(s):  
Temperature Dependence ◽  
Electrical Conduction ◽  
Silver Films ◽  
Sapphire Substrates

Electrical conduction in porous silicon: temperature dependence

2000 ◽  
Vol 31 (3) ◽  
pp. 187-191 ◽  
Author(s):  
Mikrajuddin ◽  
F.G Shi ◽  
K Okuyama
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Electrical Conduction

Temperature Dependent Morphology Transition of GaN Films

1999 ◽  
Vol 572 ◽  
Author(s):  
A. R. A. Zauner ◽  
F. K. De Theue ◽  
P. R. Hageman ◽  
W. J. P. Van ◽  
J. J. Schermer ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Temperature Dependence ◽  
Growth Rates ◽  
Temperature Dependent ◽  
Relative Growth ◽  
Relative Growth Rates ◽  
Morphology Transition ◽  
Temperature Range ◽  
Sapphire Substrates ◽  
Low Pressure Mocvd

ABSTRACTThe temperature dependence of the surface morphology of GaN epilayers was studied with AFM. The layers were grown by low pressure MOCVD on (0001) sapphire substrates in the temperature range of 980°C-1085°C. In this range the (0001) and {1101} faces completely determine the morphology of 1.5 μm thick Ga-faced GaN films. For specimens grown at 20 mbar and temperatures below 1035°C the {1101} faces dominate the surface, which results in matt-white layers. At higher growth temperatures the morphology is completely determined by (0001) faces, which lead to smooth and transparent samples. For growth at 50 mbar, this transition takes place between 1000°C and 1015°C. It is shown that the morphology of the films can be described using a parameter αGaN, which is proportional to the relative growth rates of the (0001) and the {1101} faces.

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2022-2024 ◽  
Author(s):  
Yoshinao Kumagai ◽  
Hirokazu Adachi ◽  
Aya Otake ◽  
Yoshihiro Higashikawa ◽  
Rie Togashi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

THE MAGNETORESISTANCE OF CARBON-BLACK SAMPLES AT DIFFERENT TEMPERATURES

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2960-2963 ◽  
Author(s):  
A. APARECIDO-FERREIRA ◽  
E. S. ALVES ◽  
G. M. RIBEIRO ◽  
J. F. SAMPAIO
Keyword(s):  
Magnetic Fields ◽  
Carbon Black ◽  
Temperature Dependence ◽  
Electrical Conduction ◽  
Experimental Results ◽  
Localized States ◽  
Variable Range Hopping ◽  
Coulomb Gap ◽  
Different Temperatures ◽  
High Fields

We present experimental results for the magnetoresistance of carbon-black, in magnetic fields (B) up to 15 T, and its temperature dependence at temperatures (T) from 10 K to 1.2 K. At these temperatures the electrical conduction is given by variable range hopping with Coulomb gap. The results show a B2 dependence at low fields and a B1/2 dependence in the limits of high fields. We show that the model of hydrogenlike localized states cannot explain the experimental results.

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