Characteristics of rutile TiO2 films prepared by r.f. magnetron sputtering at a low temperature

1996 ◽  
Vol 281-282 ◽  
pp. 427-430 ◽  
Author(s):  
Kunio Okimura ◽  
Naohiro Maeda ◽  
Akira Shibata
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Tio2 Films ◽  
Rutile Tio2

Deposition of rutile TiO2 films by pulsed and high power pulsed magnetron sputtering

2016 ◽  
Vol 293 ◽  
pp. 16-20 ◽  
Author(s):  
W. Schönberger ◽  
H. Bartzsch ◽  
S. Schippel ◽  
T. Bachmann
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Tio2 Films ◽  
Rutile Tio2 ◽  
Pulsed Magnetron

Atomic layer deposition for rutile structure TiO2 thin films using a SnO2 seed layer and low temperature heat treatment

2021 ◽  
Author(s):  
Byunguk Kim ◽  
Yeonsik Choi ◽  
Dahyun Lee ◽  
Seonghak Cheon ◽  
Younghun Byun ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Low Temperature ◽  
Tio2 Film ◽  
Seed Layer ◽  
Sno2 Film ◽  
Tio2 Films ◽  
Rutile Tio2 ◽  
Temperature Heat ◽  
Temperature Heat Treatment

Abstract We study the rutile-TiO2 film deposition with a high-k value using a SnO2 seed layer and a low temperature heat treatment. Generally, heat treatment over 600 ℃ is required to obtain the rutile-TiO2 film. However, By using a SnO2 seed layer, we obtained rutile-TiO2 films with heat treatments as low as 400 ℃. The XPS analysis confirms that the SnO2 and TiO2 film were deposited. The XRD analysis showed that a heat treatment at 400 ℃ after depositing the SnO2 and TiO2 films was effective in obtaining the rutile-TiO2 film when the SnO2 film was thicker than 10nm. The TEM / EDX analysis show that no diffusion in the thin film between TiO2 and SnO2. The dielectric constant of the TiO2 film deposited on the SnO2 film (20 nm) was 68, which was more than twice as high as anatase TiO2 dielectric constant. The current density was 10-4A/cm2 at 0.7 V and this value confirmed that the leakage current was not affected by the SnO2 seed layer.

scholarly journals Transparent rutile TiO2 films prepared by thermal oxidation of sputtered Ti on FTO glass

2019 ◽  
Vol 18 (4) ◽  
pp. 891-896 ◽  
Author(s):  
Josef Krýsa ◽  
Hana Krýsová ◽  
Zdeněk Hubička ◽  
Štěpán Kment ◽  
Jaroslav Maixner ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Oxidation ◽  
Tio2 Films ◽  
Rutile Tio2 ◽  
Step Process ◽  
Fto Glass ◽  
Ti Films

Compact and photoactive transparent rutile TiO2 films were deposited by a two-step process: (i) magnetron sputtering of Ti films on a heated FTO substrate and (ii) subsequent thermal oxidation.

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