Investigation of thin-film transistors using a combination of focused ion beam etching and cross-sectional transmission electron microscopy observation

1996 ◽  
Vol 281-282 ◽  
pp. 562-567 ◽  
Author(s):  
S. Tsuji ◽  
K. Tsujimoto ◽  
N. Tsutsui ◽  
N. Miura ◽  
K. Kuroda ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Transmission Electron Microscopy Observation ◽  
Microscopy Observation ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
Transmission Electron

Characterization of Heterointerfaces in Thin-Film Transistors by Cross-Sectional Transmission Electron Microscopy

1996 ◽  
Vol 466 ◽  
Author(s):  
K. Kuroda ◽  
S. Tsuji ◽  
Y. Hayashi ◽  
H. Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multilayered Structure ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTHydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are now widely used as elements for active matrix liquid crystal displays. The nanometer-scale multilayered structure of a-Si:H TFTs has been characterized by cross-sectional transmission electron microscopy (TEM). The discrete layer construction of a faulty TFTs and the generation of defects during manufacturing processes have been investigated. A combination of focused ion beam (FIB) etching and cross-sectional TEM leads to a successful failure analysis. A contamination layer with a thickness of 10–30 nm and microvoids inside multilayers are identified in faulty TFTs. An a-Si layer on silicon nitride (SiNx) is crystallized during TEM observation. Electron energy loss spectroscopy analysis indicates that the diffusion of nitrogen into a-Si layer causes the crystallization.

Cross-sectional Specimen Preparation of Fragile Failure Location in Thin-Film Transistors Using Focused Ion Beam Etching and Transmission Electron Microscope

1996 ◽  
Author(s):  
N. Miura ◽  
K. Tsujimato ◽  
R. Kanehara ◽  
N. Tsutsui ◽  
S. Tsuji
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
Transmission Electron ◽  
Failure Location

Abstract This paper describes how faulty thin-film transistors (TFTs) having fragile structures in themselves can be characterized by cross-sectional transmission electron microscopy (X-TEM) through the achievement of pinpoint accuracy in focused ion beam (FIB) etching. We demonstrate X-TEM analysis for faulty TFTs caused by mechanical damages, microvoid in their multilayers and long aluminum whiskers growing from the electrodes. X-TEM specimen were prepared by FIB etching without losing unique structures owing to fragile locations. Cross-sectional bright-field TEM micrographs clearly showed the details of cross sectional structure of fragile location. This pin-point X-TEM is quite helpful to identify faults and to reveal root causes of failures.

Processing of epitaxial LiMn2O4 thin film on MgO(110) through metalorganic precursor

2000 ◽  
Vol 15 (12) ◽  
pp. 2750-2757 ◽  
Author(s):  
Yumi H. Ikuhara ◽  
Yuji Iwamoto ◽  
Koichi Kikuta ◽  
Shin-ichi Hirano
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Precursor Solution ◽  
Interface Structure ◽  
Transmission Electron Microscopy Observation ◽  
Microscopy Observation ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Mgo Substrate

Epitaxial LiMn2O4 was successfully synthesized by coating a [Li–Mn–O] metalorganic precursor solution onto MgO (110) substrates at temperatures as low as 350 °C. Cross-sectional transmission electron microscopy observation revealed that the orientation relationship between LiMn2O4 and MgO was (111) LiMn2O4 //(111) MgO, (110) LiMn2O4 //(110) MgO, and [112] LiMn2O4 //[112] MgO, which resulted in the (111) LiMn2O4 planes growing perpendicular to the surface plane of MgO. The interface structure consisted of (111) layers of Mn atoms in the LiMn2O4 crystal aligned with the Mg atoms in the (111) planes of the MgO substrate when viewed along the [112] direction.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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