73. Thickness measurement by ultraviolet visible interference method of silicon dioxide layers deposited on polished silicon wafers

Vacuum ◽  
1965 ◽  
Vol 15 (1) ◽  
pp. 46
Keyword(s):  
Silicon Dioxide ◽  
Thickness Measurement ◽  
Silicon Wafers ◽  
Interference Method

scholarly journals Comparison Between Different Ways in Making Silicon Dioxide Layer on Silicon Wafers

2016 ◽  
Vol 88 ◽  
pp. 01009
Author(s):  
Chenguang Sun ◽  
Yanjun Wang ◽  
Qiang Xu ◽  
Xuenan Zhang ◽  
Zhenfu Liu
Keyword(s):  
Silicon Dioxide ◽  
Silicon Wafers ◽  
Silicon Dioxide Layer

UV Photon-Assisted Refractory Metal Deposition

1986 ◽  
Vol 75 ◽  
Author(s):  
G. A. Kovall ◽  
J. C. Matthews ◽  
R. Solanki
Keyword(s):  
Silicon Dioxide ◽  
Refractory Metal ◽  
High Intensity ◽  
Metal Deposition ◽  
Silicon Wafers ◽  
Mercury Lamp ◽  
Medium Pressure ◽  
Tungsten Hexafluoride ◽  
Ultraviolet Photons ◽  
Photon Source

AbstractWe have been investigating deposition of tungsten and molybdenum films at lover temperatures than conventional CVD processes with the aid of ultraviolet photons. The photon source is a high intensity, medium-pressure mercury lamp. W and Mo films have been deposited from their respective hexacarbonyls. W films have also been obtained by photon enhanced reduction of tungsten hexafluoride. In all cases films were deposited over 75 mm diameter substrates, which included quartz, silicon dioxide, and silicon wafers. The deposition system, conditions and the properties of the photodeposited films are presented.

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

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