Preparation and investigation of single crystal silicon films on sapphire and MOS transistors based on them

Vacuum ◽  
1972 ◽  
Vol 22 (3) ◽  
pp. 121
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Mos Transistors ◽  
Crystal Silicon

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

Thermal conduction in doped single-crystal silicon films

2002 ◽  
Vol 91 (8) ◽  
pp. 5079-5088 ◽  
Author(s):  
M. Asheghi ◽  
K. Kurabayashi ◽  
R. Kasnavi ◽  
K. E. Goodson
Keyword(s):  
Single Crystal ◽  
Thermal Conduction ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Crystal Silicon
Sign in / Sign up

Export Citation Format

Share Document