7354. Near-surface damage and contamination of silicon following electron cyclotron resonance etching

Vacuum ◽  
1991 ◽  
Vol 42 (8-9) ◽  
pp. 589
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Damage ◽  
Electron Cyclotron ◽  
Near Surface

Near‐surface damage and contamination of silicon following electron cyclotron resonance etching

1990 ◽  
Vol 8 (3) ◽  
pp. 2939-2944 ◽  
Author(s):  
A. S. Yapsir ◽  
G. Fortuño‐Wiltshire ◽  
J. P. Gambino ◽  
R. H. Kastl ◽  
C. C. Parks
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Damage ◽  
Electron Cyclotron ◽  
Near Surface

Dry Etching Techniques and Chemistries for III-V Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Damage ◽  
Dry Etching ◽  
Near Surface ◽  
Lattice Disorder ◽  
Ecr Plasma ◽  
Surface Morphologies

ABSTRACTDry etching of HI-V materials using both Cl-based (CCl2F2, SiCl4, BCl3, Cl2) and CH4/H2 discharges will be reviewed. The etch rates using chlorine-based mixtures are generally faster than those utilizing CH4/H2, but the latter gives smoother surface morphologies for In-containing compounds. The use of microwave (2.45 GHz) electron cyclotron resonance (ECR) discharges minimizes the depth of lattice disorder resulting from dry etching, relative to conventional RF (13.56 MHz) discharges. Recent results on the systematics of ECR plasma etching of both In- and Ga-based III-V semiconductors using CCl2F2/O2 and CH4/H2 mixtures will be discussed, including the determination of the maximum self-biases allowable which do not induce near-surface damage to the semiconductor. A further key issue is the prevention of changes in the surface stoichiometry of materials such as InP, where the lattice constituents may have considerably different volatilities in the particular discharge.

Spectroscopic Ellipsometry Study of HgCdTe Epilayer Surfaces During Electron Cyclotron Resonance Plasma Etching

1996 ◽  
Vol 450 ◽  
Author(s):  
J. N. Johnson ◽  
J. H. Dinan ◽  
K. M. Singley ◽  
M. Martinka ◽  
B. Johs
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Region ◽  
Auger Spectroscopy ◽  
Electron Cyclotron ◽  
Ex Situ ◽  
Process Conditions ◽  
Near Surface

ABSTRACTSpectroscopie ellipsometry has been used to monitor optical characteristics of HgCdTe surfaces during plasma etching in an electron cyclotron resonance reactor. Commonly used process conditions were found to induce changes in the ellipsometric parameters Δ and φ. A model was constructed to account for these changes in terms of process-induced roughness and mercury depleted sub-surface layers An independent characterization of the near-surface region was earned out ex situ after etching using Auger spectroscopy and x-ray photoelectron spectroscopy. Plasma process parameters were varied to isolate their influence on surface conditions and a set of parameters is given for which changes are minimized.

Sign in / Sign up

Export Citation Format

Share Document