Single intermetallic compound formation in Pd-Pb and Pd-Sn thin-film couples studied by X-ray diffraction

1982 ◽  
Vol 1 (1) ◽  
pp. 6-10 ◽  
Author(s):  
K.N. Tu
Keyword(s):  
Thin Film ◽  
Intermetallic Compound ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Intermetallic Compound Formation

Intermetallic Compound Formation on Solder Alloy/Cu-Substrate Interface Using Lead-Free Sn-0.7Cu/Recycled-Aluminum Composite Solder

2012 ◽  
Vol 620 ◽  
pp. 105-111 ◽  
Author(s):  
Flora Somidin ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Rafezi Ahmad Khairel
Keyword(s):  
Intermetallic Compound ◽  
Composite Solder ◽  
Lead Free ◽  
X Ray Diffraction ◽  
Aluminum Composite ◽  
Compound Formation ◽  
Cu Substrate ◽  
X Ray ◽  
Intermetallic Compound Formation ◽  
Solder Composite

Feasibility of using recycled-Aluminum (re-Al) as reinforcement particulates in Sn-0.7Cu is assessed by powder technology method, whereby re-Al particulates are produced from discarded aluminum beverage cans. This paper focuses on the intermetallic compound (IMC) formation study between the fabricated solder composite on Cu-substrate. Throughout this study, four different composition of Sn-0.7Cu/re-Al (0.0, 3.0, 3.5, 4.0 wt.%) were studied. X-ray diffraction (XRD) was used to analyze the IMCs phase formation between the interfaces. New IMC phase of Cu9Al4was detected beside Cu6Sn5and Cu3Sn in the composite solder samples. However, Sn-0.7Cu/3.0re-Al showed least formation of brittle IMCs compared to the monolithic solder.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Intermetallic Compound Formation in Ti/Al Alloy Thin Film Couples and Its Role in Electromigration Lifetime

1994 ◽  
Vol 141 (1) ◽  
pp. 302-306 ◽  
Author(s):  
D. Jawarani ◽  
J. P. Stark ◽  
H. Kawasaki ◽  
J. O. Olowolafe ◽  
C. C. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Intermetallic Compound ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Compound Formation ◽  
Intermetallic Compound Formation ◽  
Electromigration Lifetime

Effect of supersaturation of Cu on reaction and intermetallic compound formation between Sn–Cu solder and thin film metallization

2003 ◽  
Vol 18 (9) ◽  
pp. 2109-2114 ◽  
Author(s):  
J. S. Ha ◽  
T. S. Oh ◽  
K. N. Tu
Keyword(s):  
Thin Film ◽  
Intermetallic Compound ◽  
Solubility Limit ◽  
Molten Solder ◽  
Interfacial Reactions ◽  
Interfacial Stability ◽  
Compound Formation ◽  
Cu Content ◽  
Intermetallic Compound Formation ◽  
Interfacial Intermetallic Compound

Interfacial reactions and intermetallic compound formation of the eutectic Sn–0.7Cu and hypereutectic Sn–3Cu on thin film metallization of Al/Ni/Cu, Al/Cu, and Al/Ni were investigated. While the Ni layer of Al/Ni/Cu was almost consumed by Sn–0.7Cu after one reflow at 240 °C, most of it was preserved with Sn–3Cu even after ten reflows. Since the Cu content in Sn–0.7Cu is below the solubility limit of Cu in Sn at 240 °C, the Cu layer of Al/Ni/Cu was dissolved completely into Sn–0.7Cu, and the Ni was exposed to the molten solder to form intermetallics. As Cu content in Sn–3Cu is more than the solubility limit, intermetallics formed between the solder and the Cu layer, but not the Ni layer, of Al/Ni/Cu. The supersaturation of Cu in Sn–3Cu was found to be beneficial in reducing the interfacial intermetallic compound formation and in improving the interfacial stability.

Study of Molybdenum-Alusil Interdiffusion Kinetics and Contact Resistance for VLSI Applications

1985 ◽  
Vol 54 ◽  
Author(s):  
R. N. Singh ◽  
D. M. Brown ◽  
M. J. Kim ◽  
G. A. Smith
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Contact Resistance ◽  
Mass Spectroscopy ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Interdiffusion Kinetics ◽  
Secondary Ion ◽  
Complete Transformation

ABSTRACTInterdiffusion barrier characteristics of molybdenum thin films with Alusil(Al-1% Si) is studied between 733 and 7 63 K via sheet and contact resistance measurements, Rutherford backseattering spectrometry, secondary ion mass spectroscopy, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Alusil thin film couples leads to MoAl compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Alusil to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is studied and implications of these observations to VLSI device characteristics is discussed. Based on these results a safe time-temperature processing regime is proposed.

Intermetallic Compound Formation in Al/Mg Friction Stir Welded (FSW) Butt Joints

2014 ◽  
Author(s):  
Z. G. El Chlouk ◽  
G. Ayoub ◽  
G. T. Kridli ◽  
R. F. Hamade
Keyword(s):  
Intermetallic Compounds ◽  
Micro Hardness ◽  
X Ray Diffraction ◽  
Butt Joints ◽  
Compound Formation ◽  
X Ray ◽  
Friction Stir ◽  
Β Phase ◽  
Α Phase ◽  
Intermetallic Compound Formation

In this work, friction stir welding (FSW) is used to produce butt joints of 3-mm-thick sheets of AZ31B magnesium alloy to two different aluminum alloys: AA1100 (minimum 99% aluminum) and AA6061 (97.9% Al). The paper reports on utilizing metallurgical techniques to determine the distribution profiles of elemental aluminum and magnesium within the joints were produced using energy dispersive x-ray spectroscopy (EDX). Furthermore, X-ray diffraction (XRD) was used to identify the intermetallic compounds that form in the joints as a result of the stirring action at processing temperatures. Measurements confirmed the presence of primary intermetallic compounds in the welded joints and were identified to be the α-phase (Al12Mg17) and the β-phase (Al3Mg2). Lastly, micro-hardness studies were conducted at the intermetallic-compounds-rich locations resulting in hardness profiles.

The Effect of Copper on the Titanium-Silicon Dioxide Rbaction and the Implications for Self-Encapsulatin G. Self-Adhering Metallization Lines

1992 ◽  
Vol 260 ◽  
Author(s):  
Stephen W. Russell ◽  
Jian Li ◽  
Jay W. Strane ◽  
James W. Mayer
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Intermetallic Compound Formation ◽  
Effect Of Copper ◽  
Titanium Silicon ◽  
Ti Films

ABSTRACTCo-evaporated Cu-Ti films on thermally-oxidized Si substrates were annealed in vacuum at temperatures between 300 and 700°C. Reactions within the films and between film and substrate were monitored by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and sheet resistance. We found that, despite the competition from intermetallic compound formation, the Cu-Ti films react with SiO2 beginning at 400°C, with Ti migrating to the SiO2 interface to form both a suicide, Ti5Si3, and an oxide and to the free surface to form additional oxide. The reaction leaves relatively pristine Cu. Above 600°C, however, Cu begins to react with the underlying suicide. By comparison, pure Ti reacts with SiO2 only above ∼700°C.

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