Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor deposition

1996 ◽  
Vol 26 (4-5) ◽  
pp. 223-226 ◽  
Author(s):  
K. Wongchotigul ◽  
N. Chen ◽  
D.P. Zhang ◽  
X. Tang ◽  
M.G. Spencer
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Low Resistivity ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Low Resistivity Aluminum Nitride: Carbon (AIN:C) Films Grown by Metal Organic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
K. Wongchotiqul ◽  
N. Chen ◽  
D. P. Zhang ◽  
X. Tang ◽  
M. G. Spencer
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Partial Pressure ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Low Resistivity ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLow resistivity single crystal aluminum nitride-carbon (AIN:C) films were grown by metal organic chemical vapor deposition (MOCVD). The growth system used ammonia (NH3), trimethylaluminum (TMA), hydrogen (H2), and propane (C3H8) precursors. Films produced with high partial pressure of propane during growth exhibited high conductivity. Van der Paw measurements indicated that the resistivity of the as grown films changed dramatically from 108 ohm-cm for unintentionally doped samples to less than .2 ohm-cm for partial pressures of propane greater than 0.5×10−3 torr. Reflection electron diffraction (RHEED) measurements performed "in situ" just after film growth indicated that the material is single crystal up to a propane partial pressure of 2.5×10−3 torr. P-n junctions of n-type 6H-SiC and p-type AIN:C were fabricated, blue emission (centered at 490nm) was observed from the heterojunction under forward bias.

Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide

1997 ◽  
Vol 82 (6) ◽  
pp. 2990-2995 ◽  
Author(s):  
C.-M. Zetterling ◽  
M. Östling ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
X. Tang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition

2016 ◽  
Vol 31 (8) ◽  
pp. 085003 ◽  
Author(s):  
Humberto M Foronda ◽  
Matthew A Laurent ◽  
Benjanim Yonkee ◽  
Stacia Keller ◽  
Steven P DenBaars ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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