Determination of the gate-voltage dependent series resistance and channel length in sub micron LDD-MOSFETs

1991 ◽  
Vol 15 (1-4) ◽  
pp. 555-558 ◽  
Author(s):  
J.A.M. Otten ◽  
F.M. Klaassen
Keyword(s):  
Gate Voltage ◽  
Series Resistance ◽  
Channel Length ◽  
Voltage Dependent ◽  
Dependent Series

scholarly journals Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
A. Ciprut ◽  
A. Chelly ◽  
A. Karsenty
Keyword(s):  
Gate Voltage ◽  
Series Resistance ◽  
Mobility Models ◽  
Soi Mosfet ◽  
Semiempirical Approach ◽  
Voltage Dependent ◽  
Channel Thickness ◽  
Dependent Series ◽  
Tcad Simulation ◽  
Or Gate

TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the sameW/Lratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.). The experimental transferI-Vcharacteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (RSD). TCAD tools do not usually considerRSDto be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.

Channel length-dependent series resistance?

2012 ◽  
Author(s):  
J.P. Campbell ◽  
K.P. Cheung ◽  
S.A. Drozdov ◽  
R.G. Southwick ◽  
J.T. Ryan ◽  
...  
Keyword(s):  
Series Resistance ◽  
Channel Length ◽  
Dependent Series

Theory for voltage dependent series resistance in silicon solar cells

1984 ◽  
Vol 27 (3) ◽  
pp. 267-273 ◽  
Author(s):  
S.R. Dhariwal ◽  
S. Mittal ◽  
R.K. Mathur
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Silicon Solar Cells ◽  
Voltage Dependent ◽  
Dependent Series
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