The forward and reverse bias current–voltage (I–V) characteristics of Au/V-doped polyvinyl chloride+Tetracyanoquino dimethane/porous silicon (PVC+TCNQ/p-Si) structures have been investigated in the temperature range of 160–340 K. The zero bias or apparent barrier height (BH) (Φ ap = Φ Bo ) and ideality factor (n ap = n) were found strongly temperature dependent and the value of n ap decreases, while the Φ ap increases with the increasing temperature. Also, the Φ ap versus T plot shows almost a straight line which has positive temperature coefficient and it is not in agreement with the negative temperature coefficient of ideal diode or forbidden bandgap of Si (α Si = -4.73×10-4 eV/K ). The high value of n cannot be explained only with respect to interfacial insulator layer and interface traps. In order to explain such behavior of Φ ap and n ap with temperature, Φ ap Versus q/2kT plot was drawn and the mean value of (Φ Bo ) and standard deviation (σs) values found from the slope and intercept of this plot as 1.176 eV and 0.152 V, respectively. Thus, the modified ( ln (Io/T2)-(qσs)2/2(kT)2 versus (q/kT) plot gives the Φ Bo and effective Richardson constant A* as 1.115 eV and 31.94 A ⋅(cm⋅K)-2, respectively. This value of A*( = 31.94 A⋅( cm ⋅K)-2) is very close to the theoretical value of 32 A ⋅(cm⋅K)-2 for p-Si. Therefore, the forward bias I–V–T characteristics confirmed that the current-transport mechanism (CTM) in Au/V-doped PVC+TCNQ/p-Si structures can be successfully explained in terms of the thermionic emission (TE) mechanism with a Gaussian distribution (GD) of BHs at around mean BH.
