Chemical vapor deposition of fine-grained equiaxed tungsten films

BaTiO3 thin films were deposited by metal-organic chemical vapor deposition at 840 °C on two differently treated (100) MgO single crystal substrates. One MgO substrate was only mechanically polished and the other substrate was polished and then annealed at 1100 °C for 4 h in oxygen. Observation by transmission electron microscopy showed that the BaTiO3 thin film deposited on the unannealed substrate was fine-grained and that the whole film was epitaxial (100) in nature. In contrast, the film deposited on the annealed substrate consisted of large, (100)-oriented, epitaxial grains within which were distributed (110)-oriented grains with random in-plane orientations. These differences in BaTiO3 films deposited on differently treated substrates are discussed with reference to the surface structure of the MgO substrate and nucleation kinetics of BaTiO3 thin films on MgO.

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Friction and cutting properties of hot-filament chemical vapor deposition micro- and fine-grained diamond coated silicon nitride inserts

Journal of Shanghai Jiaotong University (Science) ◽

10.1007/s12204-010-1043-x ◽

2010 ◽

Vol 15 (5) ◽

pp. 519-525 ◽

Cited By ~ 1

Author(s):

Guo-dong Yang ◽

Bin Shen ◽

Fang-hong Sun

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Fine Grained ◽

Hot Filament

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Fine‐grained 3C‐SiC thick films prepared via hybrid laser chemical vapor deposition

Journal of the American Ceramic Society ◽

10.1111/jace.16445 ◽

2019 ◽

Vol 102 (9) ◽

pp. 5668-5678 ◽

Cited By ~ 4

Author(s):

Youfeng Lai ◽

Hong Cheng ◽

Zhenglin Jia ◽

Qizhong Li ◽

Meijun Yang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thick Films ◽

Chemical Vapor ◽

Laser Chemical Vapor Deposition ◽

Fine Grained

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Coating of Small Particles by Chemical Vapor Deposition While the Particles are Fluidized

MRS Proceedings ◽

10.1557/proc-372-139 ◽

1994 ◽

Vol 372 ◽

Cited By ~ 4

Author(s):

J. L. Kaae

Keyword(s):

Chemical Vapor Deposition ◽

Fluidized Bed ◽

Vapor Deposition ◽

Collection Efficiency ◽

Chemical Vapor ◽

Pyrolytic Carbon ◽

Small Particles ◽

Two Phase ◽

Fine Grained ◽

Particle Bed

AbstractCoating of small particles is often employed to impart special properties to the particles. One process that has been used to accomplish this is chemical vapor deposition while the particles are fluidized. Because the depositing solids can plug small orifices, the gas distributors used for chemical vapor deposition in a fluidized bed of particles are different from those used for most other fluidized bed processes. The turbulent mixing of the gases by the particle bed and the high collection efficiency of depositing species by the large surface area of the particle bed can produce unique coating microstructures. Examples of these unique microstructures are those of isotropic pyrolytic carbon, fine-grained silicon carbide and carbon-silicon two-phase mixtures.

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Preparation of the highly dense ceramic–metal fuel particle with fine-grained tungsten layer by chemical vapor deposition for the application in nuclear thermal propulsion

Tungsten ◽

10.1007/s42864-021-00117-2 ◽

2021 ◽

Author(s):

Li-Hua Guo ◽

Feng Zhang ◽

Lin-Yuan Lu ◽

Yan You ◽

Jun-Qiang Lu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Fuel Particle ◽

Fine Grained ◽

Tungsten Layer ◽

Dense Ceramic ◽

Metal Fuel

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Preparation of Fine Grained SiC Layer by Fluidized Bed Chemical Vapor Deposition with Pulsed Propylene

Journal of the American Ceramic Society ◽

10.1111/jace.14281 ◽

2016 ◽

Vol 99 (6) ◽

pp. 1870-1873 ◽

Cited By ~ 5

Author(s):

Rongzheng Liu ◽

Malin Liu ◽

Ziliang Wang ◽

Youlin Shao ◽

Jiaxing Chang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Fluidized Bed ◽

Vapor Deposition ◽

Chemical Vapor ◽

Fine Grained

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In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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