The effect of sputter deposition conditions on growth mechanism and microstructure of YBa2Cu3O7−x thin films on NdGaO3 substrates studied by scanning tunneling microscopy

1992 ◽  
Vol 42-44 ◽  
pp. 705-714 ◽  
Author(s):  
M.E. Hawley ◽  
I.D. Raistrick ◽  
R.J. Houlton ◽  
F.H. Garzon ◽  
M. Piza
1992 ◽  
Vol 275 ◽  
Author(s):  
R. C. Chapman ◽  
O. Aucffillo ◽  
D. J. LichtenWalner ◽  
R. P. Adu ◽  
C. N. SobleII ◽  
...  

ABSTRACTIon beam sputter-deposition has been used to produce high temperature superconducting (HTSC) thin films with controlled orientation. Room temperature scanning tunneling microscopy (STM) studies of ion beam sputter-deposited Y-Ba-Cu-O thin films indicate that the growth mode depends on whether the films are a- or c-axis oriented. The c-axis oriented films appear to grow by a screw dislocation mechanism, producing layered spirals similar to those observed in films grown by plasma sputtering and laser ablation-deposition. STM images of the a-axis oriented films show a growth mode which appears to produce layered structures perpendicular to the substrate with no spirals. Scanning tunneling spectroscopy (STS) studies of the a- and c-axis oriented films tend to reflect the anisotropy of the Y-Ba-Cu-O structure. Both the c-axis and the a-axis oriented films have semiconducting characteristics, possibly due to a native oxide, with a band gap estimated to be 1.4 eV. The c-axis oriented film, however, exhibits more fine structure in its density of states. This apparent anisotropie band structure reflects the anisotropie Y-Ba-Cu-O microstructure and superconducting characteristics. Investigations with x-ray photcelectron spectroscopy (XPS) establish a substantial chemical difference between the two surfaces inferring more substantial native oxides and air-induced by-products on the a-axis oriented film.


1997 ◽  
Vol 12 (8) ◽  
pp. 1942-1945 ◽  
Author(s):  
H. J. Gao ◽  
H. X. Zhang ◽  
Z. Q. Xue ◽  
S. J. Pang

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) investigation of tetracyanoquinodimethane (TCNQ) and the related C60-TCNQ thin films is presented. Periodic molecular chains of the TCNQ on highly oriented pyrolytic graphite (HOPG) substrates were imaged, which demonstrated that the crystalline (001) plane was parallel to the substrate. For the C60-TCNQ thin films, we found that there were grains on the film surface. STM images within the grain revealed that the well-ordered rows and terraces, and the parallel rows in different grains were generally not in the same orientation. Moreover, the grain boundary was also observed. In addition, AFM was employed to modify the organic TCNQ film surface for the application of this type of materials to information recording and storage at the nanometer scale. The nanometer holes were successfully created on the TCNQ thin film by the AFM.


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