Effect of hydrogen absorption on electrical resistance and hall effect charge carrier concentration in FeTi, FeTiSz, TiNi and TiNiSez thin films

1992 ◽  
Vol 17 (1) ◽  
pp. 29-35 ◽  
Author(s):  
M SINGH ◽  
Y VIJAY ◽  
I JAIN
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Electrical Resistance ◽  
Hydrogen Absorption ◽  
Charge Carrier Concentration

Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
B.S. So ◽  
Y.H. You ◽  
H.J. Kim ◽  
Y.H. Kim ◽  
J.H. Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Charge Carrier Concentration ◽  
Furnace Temperature ◽  
Ion Activation ◽  
Hall Effect Measurements

AbstractActivation of polycrystalline silicon (poly-Si) thin films doped as n-type using selective ion implantation of phosphorous was performed employing field-enhanced rapid thermal annealing where rapid thermal annealing of halogen lamps is combined with alternating magnetic fields. The ion activation was evaluated using Hall effect measurements incorporating the resistivity, the charge carrier concentration, and the mobility. Statistical design of experiments is attempted in order to clarify the effects and interactions of processes variables on field-enhanced rapid thermal annealing towards ion activation: the three processing variables are furnace temperature, power of halogen lamp, and the alternating magnetic field. Hall effect measurements indicate that the furnace temperature and RTA power are found to be dominant in activating the doped polycrystalline Si in dose. The activation process results from the competition between charge carrier concentration and mobility: the increase in mobility is larger than the decrease in charge carrier concentration.

μSR and Hall-Effect Studies of the Charge Carrier Concentration in Hydrogenated YBa 2 Cu 3 O 7

1991 ◽  
Vol 15 (3) ◽  
pp. 355-360 ◽  
Author(s):  
H Glückler ◽  
Ch Niedermayer ◽  
G Nowitzke ◽  
E Recknagel ◽  
J Erxmeyer ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Charge Carrier Concentration

Growth and Characterizations of Tin-Doped on Nickel-Phthalocyanine as a Novel Nanomaterial

2015 ◽  
Vol 1131 ◽  
pp. 39-42
Author(s):  
Narin Tammarugwattana ◽  
Kitipong Mano ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Navaphun Kayunkid ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
Doping Concentration ◽  
Charge Carrier Concentration ◽  
Sn Doping ◽  
Nickel Phthalocyanine ◽  
Β Phase

Tin-doped nickel phthalocyanine thin films (Sn-doped NiPc) were deposited by thermal co-evaporation method. Doping concentration of tin in NiPc was controlled via different deposition rates between metal dopent and host organic material. Properties of the thin films doped by tin in the range of 3 to 15% were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of Al/Sn-doped-NiPc/ITO devices i.e. charge carrier concentration and carrier mobility were characterized by current-voltage and capacitance-voltage measurements. Microscopic results show clear evidence of the morphological transition from granular structure in undoped-film to rod-liked structure in the films doped more than 5%. Moreover, surface grain size exhibits the tendency to decrease with the increase of doping concentration. Optical properties reveal that the packing of NiPc molecules in all doping conditions is the combination of α-phase (majority) and β-phase (minority). However, evolution of β-phase NiPc is observed with the increase of doping concentration. Photoelectron analyses indicate shift of binding energy in both Ni2p and Sn3d levels corresponding to charge transfer between nickel-core and tin dopant. In addition, the electrical properties show the enhancement of the film’s conductivity due to the increase of charge carrier concentration with the higher Sn-doping level.

Study on Optical and Electrical Properties of Bismuth-Doped Nickel-Phthalocyanine Thin Films

2016 ◽  
Vol 848 ◽  
pp. 95-98
Author(s):  
Narin Tammarugwattana ◽  
Kitipong Mano ◽  
Kraisak Watthanarungsarit ◽  
Adirek Rangkasikorn ◽  
Navaphun Kayunkid ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Charge Carrier Concentration ◽  
Optical And Electrical Properties ◽  
Nickel Phthalocyanine ◽  
Β Phase

The objective of this work is to investigate the optical and electrical properties of bismuth-doped nickel-phthalocyanine thin films (Bi-doped NiPc). The doped films were prepared by thermal co-evaporation as a function of Bi concentration. The amount of Bi in NiPc was controlled via different deposition rates between metal dopant and organic host. The optical properties of the hybrid films were characterized by spectroscopic techniques. Furthermore, the electrical properties e.g. charge carrier concentration and carrier mobility of Al/Bi-doped-NiPc/ITO devices were characterized by current-voltage and capacitance-voltage measurements. The results of optical properties suggest that the crystalline packing of NiPc molecules in all preparation conditions is a combination of α-phase (majority) and β-phase (minority). However, the evolution of β-phase NiPc is observed with the increase of metal doping concentration. Raman spectroscopic results reveal that there is no chemical bond taken place between Bi and NiPc. In addition, with increasing dopant concentration, electrical properties present the enhancement of conducting current of hybrid devices as result from the increment of both charge carrier concentration and charge carrier mobility.

Electrical conductivity and thermo-electric power of a-Se80–xInx and Se80–xGe20Inx thin films

2002 ◽  
Vol 80 (1) ◽  
pp. 19-27 ◽  
Author(s):  
Z H Khan ◽  
M Zulfeqaur ◽  
A Kumar ◽  
M Husain
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Charge Carrier ◽  
Electric Power ◽  
Carrier Concentration ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Dc Conductivity ◽  
Free Charge ◽  
Thermo Electric

The dc conductivity and thermo-electric power of a-Se80–xInx (x = 5, 10, 15, 20, 30) and a-Se80–xGe20Inx (x = 0, 5, 10, 15, 20) thin films are reported in the present work. The free-charge-carrier concentration is calculated with the help of dc conductivity and thermo-electric power measurements. The calculated values of the free-charge-carrier concentration have been used to evaluate the free-charge-carrier mobility from which the grain boundary potential was evaluated. The results are interpreted in terms of band tailing and the structure of Se–In, Se–Ge–In, and the grain boundary potential barrier. PACS Nos.: 73.61-p, 61.43Dq

The influence of composition on polymorphism, structure and charge carrier concentration in TL-2201.

1994 ◽  
Vol 235-240 ◽  
pp. 539-540
Author(s):  
C. Ström ◽  
S.-G. Eriksson ◽  
J. Albertsson ◽  
N. Winzek
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration
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