scholarly journals Low energy wave packet tunneling from a parabolic potential well through a high potential barrier

1996 ◽  
Vol 220 (1-3) ◽  
pp. 41-48 ◽  
Author(s):  
V.V. Dodonov ◽  
A.B. Klimov ◽  
V.I. Man'ko
Keyword(s):  
Wave Packet ◽  
Potential Barrier ◽  
High Potential ◽  
Low Energy ◽  
Potential Well ◽  
Parabolic Potential ◽  
High Potential Barrier

High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

2013 ◽  
Vol 47 (9) ◽  
pp. 1258-1263 ◽  
Author(s):  
A. A. Petukhov ◽  
B. E. Zhurtanov ◽  
K. V. Kalinina ◽  
N. D. Stoyanov ◽  
H. M. Salikhov ◽  
...  
Keyword(s):  
High Temperature ◽  
Potential Barrier ◽  
High Potential ◽  
Light Emitting ◽  
High Potential Barrier

scholarly journals Determination of a High Potential Barrier Hindering Internal Rotation from the Ground State Spectrum

1983 ◽  
Vol 38 (9) ◽  
pp. 1010-1014 ◽  
Author(s):  
W. Stahl ◽  
H. Dreizler ◽  
M. Hayashi
Keyword(s):  
Internal Rotation ◽  
Potential Barrier ◽  
Ground State ◽  
High Potential ◽  
Rotational Spectrum ◽  
High Potential Barrier

Abstract We present an analysis of the rotational spectrum of ethylchloride-35Cl in the ground state. The 35Cl-hfs analysis was extended and the barrier to internal rotation determined from narrow splittings of high J-transitions.

Determination of a High Potential Barrier Hindering Internal Rotation from the Analysis of the Ground State Spectrum: The Case of Ethyl Cyanide

1980 ◽  
Vol 35 (11) ◽  
pp. 1136-1141 ◽  
Author(s):  
D. Boucher ◽  
A. Dubrulle ◽  
J. Demaison ◽  
H. Dreizler
Keyword(s):  
Internal Rotation ◽  
Potential Barrier ◽  
Ground State ◽  
High Potential ◽  
State Transitions ◽  
Rotational Spectrum ◽  
Barrier Potential ◽  
High Potential Barrier

Abstract The ground state rotational spectrum of ethyl cyanide has been reinvestigated between 8 and 250 GHz. The barrier potential V3 is calculated from 11 high J, ground state transitions which were found split into doublets. V3 is 3007 cal/mole, assuming Iα = 3.167 u Å2 and ∢ (i,a) = 48.65°. The splittings of the K-doublet transitious have also been analyzed.

Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Barrier ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
High Potential ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electroluminescence Intensity ◽  
High Potential Barrier

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

Effects of high potential barrier on InAs quantum dots and wetting layer

2002 ◽  
Vol 91 (8) ◽  
pp. 5055-5059 ◽  
Author(s):  
Jin Soo Kim ◽  
Phil Won Yu ◽  
Jae-Young Leem ◽  
Minhyon Jeon ◽  
Sam Kyu Noh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Potential Barrier ◽  
High Potential ◽  
Wetting Layer ◽  
Inas Quantum Dots ◽  
High Potential Barrier

High Potential Barrier Effects on Self-Assembled InAs Quantum Dots

2007 ◽  
Vol 50 (3) ◽  
pp. 767 ◽  
Author(s):  
S. I. Jung ◽  
H. Y. Yeo ◽  
I. Yun ◽  
J. Y. Leem ◽  
S. M. Cho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Potential Barrier ◽  
High Potential ◽  
Inas Quantum Dots ◽  
Barrier Effects ◽  
High Potential Barrier ◽  
Self Assembled
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