scholarly journals The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 897-898 ◽  
Author(s):  
Nabil M. Amer ◽  
Andrew Skumanich ◽  
Warren B. Jackson
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Gap State

Improved Light Soaking Stability of R.F. Sputter Deposited Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
A. Wynveen ◽  
J. Fan ◽  
J. Kakalios ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Initial Defect ◽  
Optical Gap ◽  
Sputter Deposited ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

ABSTRACTStudies of r.f. sputter deposited hydrogenated amorphous silicon (a-Si:H) find that the light induced decrease in the dark conductivity and photoconductivity (the Staebler-Wronski effect) is reduced when the r.f. power used during deposition is increased. The slower Staebler-Wronski effect is not due to an increase in the initial defect density in the high r.f. power samples, but may result from either the lower hydrogen content or the smaller optical gap found in these films.

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