Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques

1985 ◽  
Vol 22-23 ◽  
pp. 520-544 ◽  
Author(s):  
J.E. Greene ◽  
S.A. Barnett ◽  
A. Rockett ◽  
G. Bajor
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Interaction Effects ◽  
Surface Interaction ◽  
Semiconductor Film ◽  
Dopant Incorporation

In situ studies of III–V semiconductor film growth by molecular beam epitaxy

1999 ◽  
Vol 201-202 ◽  
pp. 106-112 ◽  
Author(s):  
B.A Joyce ◽  
D.D Vvedensky ◽  
T.S Jones ◽  
M Itoh ◽  
G.R Bell ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Semiconductor Film ◽  
In Situ Studies

RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 319-326 ◽  
Author(s):  
Y. Yasuda ◽  
K. Itoh ◽  
N. Ohshima ◽  
Y. Koide ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Initial Stage

scholarly journals Roughening in Nonlinear Surface Growth Model

2020 ◽  
Vol 10 (4) ◽  
pp. 1422 ◽  
Author(s):  
Gabriella Bognár
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Film Growth ◽  
Nonlinear Differential Equations ◽  
Numerical Approach ◽  
Surface Roughening ◽  
Time Interval ◽  
Nonlinear Surface ◽  
Over Time

The aim of this paper is to examine the coarsening process in the evolution of the surface morphology during molecular beam epitaxy (MBE). A numerical approach for modeling the evolution of surface roughening in film growth by MBE is proposed. The model is based on the nonlinear differential equations by Kuramoto–Sivashinsky (KS) namely, KS and CKS (conserved KS). In particular, we propose a “combined version” of KS and CKS equations, which is solved as a function of a parameter r for the 1 + 1 dimensional case. The computation provides film height as a function of space and time. From this quantity the change of the width of the film over time has numerically been studied as a function of r. The main result of the research is that the surface width is exponentially increasing with increasing time and the change in surface width for smaller r values is significantly greater over longer time interval.

β-Al2xGa2-2xO3Thin Film Growth by Molecular Beam Epitaxy

2009 ◽  
Vol 48 (7) ◽  
pp. 070202 ◽  
Author(s):  
Takayoshi Oshima ◽  
Takeya Okuno ◽  
Naoki Arai ◽  
Yasushi Kobayashi ◽  
Shizuo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth

scholarly journals GaN film growth on LiNbO3surfaces using molecular beam epitaxy

2009 ◽  
Vol 187 ◽  
pp. 012013 ◽  
Author(s):  
Man Hoai Nam ◽  
Son Chul Goo ◽  
Moon Deock Kim ◽  
Woochul Yang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gan Film

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

1997 ◽  
Vol 392 (1-3) ◽  
pp. L63-L68 ◽  
Author(s):  
G. Glass ◽  
H. Kim ◽  
M.R. Sardela ◽  
Q. Lu ◽  
J.R.A. Carlsson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Dangling Bond ◽  
Gas Source ◽  
B Doping

scholarly journals Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

2017 ◽  
Vol 463 ◽  
pp. 116-122 ◽  
Author(s):  
Saroj Kumar Patra ◽  
Thanh-Nam Tran ◽  
Lasse Vines ◽  
Ilia Kolevatov ◽  
Edouard Monakhov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dopant Incorporation
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