In situ studies of III–V semiconductor film growth by molecular beam epitaxy

AbstractFe0.1Sc0.9N with a thickness of ˜ 380 nm was grown on top of a ScN(001) buffer layer of ˜ 50 nm, grown on MgO(001) substrate by radio-frequency N-plasma molecular beam epitaxy (rf-MBE). The buffer layer was grown at TS ˜ 800 oC, whereas the Fe0.1Sc0.9N film was grown at TS ˜ 420 oC. In-situ reflection high-energy electron diffraction measurements show that the Fe0.1Sc0.9N film growth starts with a combination of spotty and streaky pattern [indicative of a combination of smooth and rough surface]. After ˜ 10 minutes of growth, the pattern converts to a spotty one [indicative of a rough surface]. Towards the end of the Fe0.1Sc0.9N film growth, the spotty patterns transform into even spottier, but also ring-like indicating a polycrystalline behavior. Superconducting quantum interference device magnetic measurements show a ferromagnetic to paramagnetic transition of TC ˜ 370 – 380 K. We calculated a magnetic moment per atom of μ(Fe0.1Sc0.9N) = 0.037 Bohr magneton/ Mn-atom. Based on the carrier concentration measurements (nS(Fe0.1Sc0.9N) = 2.086 × 1019 /cm3), we find that iron behaves as an acceptor. Comparisons are made with similar MnScN (001)/ScN(001)/MgO(001) system.

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Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques

Applications of Surface Science ◽

10.1016/0378-5963(85)90184-9 ◽

1985 ◽

Vol 22-23 ◽

pp. 520-544 ◽

Cited By ~ 47

Author(s):

J.E. Greene ◽

S.A. Barnett ◽

A. Rockett ◽

G. Bajor

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Film Growth ◽

Interaction Effects ◽

Surface Interaction ◽

Semiconductor Film ◽

Dopant Incorporation

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An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010648x ◽

1988 ◽

Vol 46 ◽

pp. 884-885

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove ◽

R. T. Tung

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Defect Density ◽

High Vacuum ◽

Ultra High Vacuum ◽

Ex Situ ◽

Metal Base ◽

In Situ Experiments ◽

Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.122916 ◽

1998 ◽

Vol 73 (26) ◽

pp. 3857-3859 ◽

Cited By ~ 15

Author(s):

D. Stifter ◽

M. Schmid ◽

K. Hingerl ◽

A. Bonanni ◽

M. Garcia-Rocha ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Difference Spectroscopy ◽

Reflectance Difference Spectroscopy

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A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-639-g3.46 ◽

2000 ◽

Vol 639 ◽

Author(s):

Ryuhei Kimura ◽

Kiyoshi Takahashi ◽

H. T. Grahn

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Molecular Beam ◽

High Energy ◽

Rf Plasma ◽

Cubic Phase ◽

X Ray Diffraction ◽

X Ray ◽

Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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