A model for the collection of minority carriers generated in the depletion region of a Schottky barrier solar cell

Solar Cells ◽  
1982 ◽  
Vol 7 (3) ◽  
pp. 297-310 ◽  
Author(s):  
R.J. Soukup ◽  
D.R. Slocum
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Depletion Region ◽  
Minority Carriers

The effect of temperature and time on the properties of 2D Cs2ZnBr4 perovskite nanocrystals and its application in a Schottky barrier device

2021 ◽  
Author(s):  
Olusola Akinbami ◽  
Grace N Ngubeni ◽  
Francis Otieno ◽  
Rudo Kadzutu-Sithole ◽  
Cebisa Linganiso ◽  
...  
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Effect Of Temperature ◽  
Inorganic Perovskite ◽  
Perovskite Nanocrystals ◽  
The Stability ◽  
Barrier Device

2D hybrid perovskites are promising materials for solar cell applications, in particular, cesium based perovskite nanocrystals as they offer the stability that is absent in organic-inorganic perovskite. However, the most...

scholarly journals Influence of depletion region width on performance of solar cell under sunlight concentration

2011 ◽  
Vol 6 ◽  
pp. 36-45 ◽  
Author(s):  
Khalaf AL Abdullah ◽  
Bashar Bakour
Keyword(s):  
Solar Cell ◽  
Depletion Region

c-Si (n +)/a-Si Alloy/Pd Schottky Barrier Device for the Effective Evaluation of Photovoltaic Performance of a-Si Alloy Materials

1995 ◽  
Vol 377 ◽  
Author(s):  
X. Deng ◽  
S. J. Jones ◽  
J. Evans ◽  
M. Izu
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Carrier Transport ◽  
Metal Layer ◽  
Photovoltaic Performance ◽  
Red Light ◽  
Metal Structure ◽  
Evaluation Tool ◽  
Barrier Device ◽  
Alloy Metal

ABSTRACTThe Schottky barrier device with a metal/a-Si (n+) /a-Si alloy/metal structure has been widely used as an alternative evaluation tool for the photovoltaic performance of a-Si alloy material since it more reliably reflects the carrier transport in a solar cell than the conventional material characterization tool such as PDS, CPM, and SSPG, and is easier to be fabricated compared with a complete nip solar cell. However, a multiple chamber device making system is still needed to fabricate such a device since one does not want to deposit the a-Si intrinsic material to be studied together with an n+ layer in the same chamber. We have explored the use of a Schottky barrier device deposited on heavily doped n-type crystalline wafer substrate, c-Si (n+) /a-Si alloy/metal, as an evaluation tool for a-Si alloy materials. In this device, besides the evaporation of a thin semi-transparent metal layer, only the active a-Si alloy layer needs to be deposited using the plasma enhanced or other deposition techniques. We have compared the performance of such a device with that of reference n-i-p solar cells deposited at the same time and demonstrated that the FF measured under weak red light show a good correlation between these two types of devices. Therefore the c-Si (n+) /a-Si alloy/metal device can be used as a convenient technique to reliably evaluate the material performance in a solar cell device.

Relation between Non-Radiative Recombination in the Depletion Region and the Carrier Concentration in the Wide-Gap Emitter of a Heterojunction Solar Cell

2021 ◽  
Author(s):  
Tetsuya Nakamura ◽  
Mitsuru Imaizumi ◽  
Warakorn Yanwachirakul ◽  
Meita Asami ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Solar Cell ◽  
Carrier Concentration ◽  
Radiative Recombination ◽  
Depletion Region ◽  
Heterojunction Solar Cell ◽  
Wide Gap

scholarly journals Carbon quantum dots interfacial modified graphene/silicon Schottky barrier solar cell

2020 ◽  
Vol 835 ◽  
pp. 155268 ◽  
Author(s):  
Chao Geng ◽  
Yudong Shang ◽  
JiaJia Qiu ◽  
Qidi Wang ◽  
Xiuhua Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Schottky Barrier ◽  
Carbon Quantum Dots ◽  
Modified Graphene

A Schottky Barrier Type Solar Cell Using Polyacetylene

1981 ◽  
Vol 20 (2) ◽  
pp. L127-L129 ◽  
Author(s):  
Jun Tsukamoto ◽  
Hiroji Ohigashi ◽  
Kiichiro Matsumura ◽  
Akio Takahashi
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Barrier Type

Application de la méthode photonique à la détermination des paramètres physiques d'une cellule solaire monocristalline

2002 ◽  
Vol 80 (7) ◽  
pp. 733-743 ◽  
Author(s):  
M Ben Amar ◽  
A Ben Arab
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Diffusion Length ◽  
Optical Absorption Coefficient ◽  
Physical Parameters ◽  
Base Region ◽  
Technological Parameters ◽  
Base Thickness ◽  
Modulated Light ◽  
Minority Carriers

The photonic's method is used in the study of monocristalline silicon solar cell (N+P). The induced photocurrent in the cell is analyzed with respect to the technological parameters such as the optical absorption coefficient of silicon and the emitter and base thickness. The spatial and frequential variations of the photocurrent of the cell, when the latter is illuminated by a sinusoidal modulated light, allow access to the diffusion length and lifetime of the minority carriers generated in a given region of the cell. In this paper, the physical parameters related to the base region are determined. In addition, this access is shown to be possible only when the total photocurrent of the cell is reduced to the base diffusion photocurrent.

Drift‐field Schottky‐barrier solar‐cell calculations

1977 ◽  
Vol 30 (3) ◽  
pp. 172-174 ◽  
Author(s):  
L. Castañer Muñoz ◽  
C. Ferrarons
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Drift Field

A metal:p‐n‐CdTe Schottky‐barrier solar cell: Photoelectrochemical generation of a shallowp‐type region inn‐CdTe

1993 ◽  
Vol 74 (4) ◽  
pp. 2619-2625 ◽  
Author(s):  
J. Richard Pugh ◽  
Duli Mao ◽  
Ji‐Guang Zhang ◽  
Michael J. Heben ◽  
Arthur J. Nelson ◽  
...  
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Type Region
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