SiO2/TiO2 double-layer antireflective coating deposited at room temperature for metal/insulator/n-Si/p-Si solar cells

Solar Cells ◽  
1987 ◽  
Vol 22 (3) ◽  
pp. 229-236 ◽  
Author(s):  
K.L. Jiao ◽  
W.A. Anderson
2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Minghua Li ◽  
Libin Zeng ◽  
Yifeng Chen ◽  
Lin Zhuang ◽  
Xuemeng Wang ◽  
...  

We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC) on acid textures to fabricate colored multicrystalline silicon (mc-Si) solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc) as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2thickness for the case of SiO2/SiNx:H (DARC) with fixed SiNx:H (refractive indexn=2.1at 633 nm, and thickness = 80 nm). The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam) evaporation to deposit a layer of SiO2over the standard SiNx:H for156×156 mm2mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm andI-Vmeasurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.


2013 ◽  
Vol 631-632 ◽  
pp. 717-720
Author(s):  
Chun Lin He ◽  
Xue Fei Yang ◽  
Guo Feng Ma ◽  
Jian Ming Wang ◽  
Zhao Fu Du ◽  
...  

Antireflection of silicon surface is one key technology for manufacture of efficient solar cells. The noble metal assisted chemical etching Si wafer can quickly produce a black Si surface with a high porosity in HF-H2O2-H2O solution at room temperature. The pores formed are straight and vertical to the surface of Si. The porous Si surface exhibits a reflectivity of 2 % in the range of 200-1000 nm, which shows that this process is beneficial to improve the conversion efficiency and to decrease the cost of Si solar cells.


2011 ◽  
Vol 519 (20) ◽  
pp. 6887-6891 ◽  
Author(s):  
Jisoo Ko ◽  
Daeyeong Gong ◽  
Krishnakumar Pillai ◽  
Kong-Soo Lee ◽  
Minkyu Ju ◽  
...  

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1003 ◽  
Author(s):  
Wen-Jeng Ho ◽  
Jheng-Jie Liu ◽  
Yun-Chieh Yang ◽  
Chun-Hung Ho

In this study, we sought to enhance the output power and conversion efficiency of textured silicon solar cells by layering two-dimensional indium nanoparticles (In NPs) within a double-layer (SiNx/SiO2) antireflective coating (ARC) to induce plasmonic forward scattering. The plasmonic effects were characterized using Raman scattering, absorbance spectra, optical reflectance, and external quantum efficiency. We compared the optical and electrical performance of cells with and without single layers and double layers of In NPs. The conversion efficiency of the cell with a double layer of In NPs (16.97%) was higher than that of the cell with a single layer of In NPs (16.61%) and greatly exceeded that of the cell without In NPs (16.16%). We also conducted a comprehensive study on the light-trapping performance of the textured silicon solar cells with and without layers of In NPs within the double layer of ARC at angles from 0° to 75°. The total electrical output power of cells under air mass (AM) 1.5 G illumination was calculated. The application of a double layer of In NPs enabled an impressive 53.42% improvement in electrical output power (compared to the cell without NPs) thanks to the effects of plasmonic forward scattering.


Author(s):  
Lingling Zhou ◽  
Lufei Xiao ◽  
Hai Yang ◽  
Jie Liu ◽  
Xibin Yu

Band-gap alignment engineering has now been extensively studied due to its high potential application. Here we demonstrate a simple route to synthesize two metal oxide layers and align them together according to their bandgaps on surface of crystalline silicon (c-Si) solar cells. The metal oxide layers can not only extend absorption spectrum to generate extra carriers but also serve to separate electron-hole pairs more efficiently. As a consequence, the photovoltaic performance of SnO2/CdO /Si double-layer solar cell (DLSC) is highly improved compared to CdO/Si and SnO2/Si single-layer solar cells(SLSCs) and SnO2/CdO/Si double-layer solar cell (DLSC). By the alignment engineering, the SnO2/CdO/Si DLSC produces a short circuit photocurrent (Jsc) of 38.20 mA/cm2, an open circuit photovoltage (Voc) of 0.575 V and a fill factor (FF) of 68.7%, corresponding to a light to electric power conversion efficiency (η) of 15.09% under AM1.5 illumination. These results suggest that with the use of metal oxide layers by band-gap alignment engineering, new avenues have been opened for developing high-efficiency and cost-effective c-Si solar cells.


2007 ◽  
Vol 91 (2-3) ◽  
pp. 191-194 ◽  
Author(s):  
Takashi Minemoto ◽  
Takahiro Mizuta ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa

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