Plasma-Chemical Vapor-Deposited Silicon Oxide/Silicon Oxynitride Double-Layer Antireflective Coating for Solar Cells

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 997-1001 ◽  
Author(s):  
Noboru Shibata
Keyword(s):  
Solar Cells ◽  
Double Layer ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Antireflective Coating ◽  
Plasma Chemical ◽  
Chemical Vapor Deposited

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

2002 ◽  
Vol 91 (5) ◽  
pp. 3236-3242 ◽  
Author(s):  
T. G. Kim ◽  
C. N. Whang ◽  
Yohan Sun ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Si Nanocrystals ◽  
Chemical Vapor Deposited

scholarly journals Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 759
Author(s):  
Luana Mazzarella ◽  
Anna Morales-Vilches ◽  
Lars Korte ◽  
Rutger Schlatmann ◽  
Bernd Stannowski
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Transport ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Two Phase ◽  
Nanocrystalline Silicon Films

Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in silicon heterojunction (SHJ) solar cells. The reduced parasitic absorption, due to the lower absorption coefficient of nc-SiOx:H films in the relevant spectral range, leads to potential gain in short circuit current. In this work, we report on development and applications of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) from material to device level. We address the potential benefits and the challenges for a successful integration in SHJ solar cells. Finally, we prove that nc-SiOx:H demonstrated clear advantages for maximizing the infrared response of c-Si bottom cells in combination with perovskite top cells.

Microbridge Nanoindentation Testing of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films

2004 ◽  
Vol 841 ◽  
Author(s):  
Zhiqiang Cao ◽  
Tong-Yi Zhang ◽  
Xin Zhang
Keyword(s):  
Residual Stresses ◽  
Thermal Annealing ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Residual Deflection ◽  
Compressive Stresses ◽  
Stress Changes ◽  
Chemical Vapor Deposited

ABSTRACTPlasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films. Our theoretical model employed a closed formula of deflection vs. load, considering both substrate deformation and the residual stresses in the thin films. In particular, the non-negligible residual deflection caused by excessive compressive stresses was taken into account. Freestanding microbridges made of PECVD SiOx films were fabricated using bulk micromachining techniques. To simulate the thermal processing in device fabrication, these microbridges were subjected to rapid thermal annealing (RTA) up to 800°C. A microstructure-based mechanism was applied to explain the experimental results of the residual stress changes in PECVD SiOx films after thermal annealing.

Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

2006 ◽  
Vol 37 (1) ◽  
pp. 64-70 ◽  
Author(s):  
A. Szekeres ◽  
T. Nikolova ◽  
S. Simeonov ◽  
A. Gushterov ◽  
F. Hamelmann ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Chemical Vapor Deposited ◽  
Alternative Material
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