scholarly journals Role of numerical simulations in the semiconductor heterostructure technology using molecular beam epitaxy

1986 ◽  
Vol 2 (3) ◽  
pp. 185-195 ◽  
Author(s):  
Jasprit Singh ◽  
K.K. Bajaj
Keyword(s):  
Molecular Beam Epitaxy ◽  
Numerical Simulations ◽  
Molecular Beam ◽  
Semiconductor Heterostructure

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

scholarly journals Microcharacterization of Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Phase Contrast ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Carrier Recombination ◽  
Roughening Transition ◽  
Semiconductor Heterostructure ◽  
Transmission Electron ◽  
Quantum Well Wire ◽  
Interfacial Strain

The atomic structure of semiconductor heterostructure interfaces and metalsemiconductor interfaces are best characterized by transmission electron microscopy (TEM). Both phase contrast TEM and structure factor contrast TEM are able to distinguish very small structural (two monolayers) or compositional (less than 0.2%) fluctuations at interfaces. Applications of these techniques to the study of the roughening transition temperature at the Gal−xAlxAs–GaAs and Ga1−xAlxAs–Ge interfaces grown by molecular beam epitaxy are presented. Minority carrier recombination at interfaces is characterized on a microscopic scale by low temperature cathodoluminescence. This technique is used to demonstrate the role of interfaces in gettering defects in Gal1−xAlxAs/GaAs heterostructures. Finally, the effects of interfacial strain in producing a localization of the luminescence in GaAs quantum well wire structures will be discussed.

Contamination in molecular beam epitaxy: the role of arsenic drag effect

1997 ◽  
Vol 175-176 ◽  
pp. 1270-1277 ◽  
Author(s):  
Z.R. Wasilewski ◽  
S.J. Rolfe ◽  
R.A. Wilson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Drag Effect

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy

2019 ◽  
Vol 509 ◽  
pp. 23-28 ◽  
Author(s):  
C. Ramesh ◽  
P. Tyagi ◽  
G. Abhiram ◽  
G. Gupta ◽  
M. Senthil Kumar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Titanium Foil ◽  
Single Crystalline ◽  
Laser Molecular Beam Epitaxy

Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy

2020 ◽  
Vol 544 ◽  
pp. 125720
Author(s):  
Marta Sawicka ◽  
Natalia Fiuczek ◽  
Paweł Wolny ◽  
Anna Feduniewicz-Żmuda ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Nitrogen ◽  
Nitrogen Flux

Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 435-439 ◽  
Author(s):  
A.A Ashrafi ◽  
A Ueta ◽  
H Kumano ◽  
I Suemune
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates ◽  
Metalorganic Molecular Beam Epitaxy
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