Critical oxygen partial pressure for the “in-situ” preparation of high T c superconducting thin films

1989 ◽  
Vol 162-164 ◽  
pp. 81-82 ◽  
Author(s):  
R. Bormann ◽  
J. Nölting
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
Critical Oxygen

IN-SITU PREPARATION OF YBa2Cu3O7 SUPERCONDUCTING THIN FILMS BY PULSED Nd:YAG LASER DEPOSITION

1992 ◽  
Vol 06 (08) ◽  
pp. 477-483 ◽  
Author(s):  
QINGXIN SU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
HUIBIN LU ◽  
YONGJUN TIAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nd:Yag Laser ◽  
Ac Susceptibility ◽  
Substrate Surface ◽  
Zero Magnetic Field ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
Zero Resistance

High-T c superconducting thin films of YBa 2 Cu 3 O 7 were grown in-situ on (100) SrTiO 3 substrates by Nedymium:yttrium aluminum garnet [Nd:YAG] laser ablation. The effects of the substrate temperature on the transition temperature, microcrystalline structure and surface morphology of the films were discussed. Best results were obtained in the 730°–770°C range. X-ray diffraction analysis showed that these films were highly c-oriented with the c-axis perpendicular to the substrate surface. At the optimum substrate temperature, a very smooth morphology with only a few small particles were observed by scanning electron microscopy. The zero resistance temperature of these films were ≥ 90 K with a narrow transition width and the ac susceptibility measurement also gave the same result. The highest critical current density obtained at 77 K and zero magnetic field was 3.8 × 106 A/cm 2.

In Situ Deposition of YBCO Thin Films by Sputtering under Low Oxygen Partial Pressure

1994 ◽  
Vol 33 (Part 2, No. 5B) ◽  
pp. L718-L721 ◽  
Author(s):  
Yong Ki Park ◽  
Keunseop Park ◽  
Soon-Gul Lee ◽  
Dong Chan Shin ◽  
Jong-Chul Park
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Ybco Thin Films ◽  
In Situ Deposition

In situ characterization of strontium surface segregation in epitaxial La0.7Sr0.3MnO3 thin films as a function of oxygen partial pressure

2008 ◽  
Vol 93 (15) ◽  
pp. 151904 ◽  
Author(s):  
Tim T. Fister ◽  
Dillon D. Fong ◽  
Jeffrey A. Eastman ◽  
Peter M. Baldo ◽  
Matthew J. Highland ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Surface Segregation ◽  
In Situ Characterization

In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices

1989 ◽  
Vol 169 ◽  
Author(s):  
R. Singh ◽  
S. Sinha ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
High Temperature Superconductor ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
In Situ Deposition ◽  
Rapid Isothermal Processing

AbstractMetalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.

Ion beam sputter deposition of YBa2Cu3O7−δ thin films

1993 ◽  
Vol 8 (12) ◽  
pp. 3032-3042 ◽  
Author(s):  
B.J. Kellett ◽  
J.H. James
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
High Oxygen ◽  
Ion Beam Sputtering ◽  
Film Properties ◽  
High Oxygen Partial Pressure ◽  
Beam Sputtering

This article addresses issues associated with in situ growth of superconducting YBa2Cu3O7−δ thin films by ion beam sputtering. High oxygen partial pressure during ion beam deposition can cause significant beam broadening and oxidation of filaments and grids. Also, many of the targets used for processing YBCO are unstable when sputtered in a high oxygen partial pressure. It is shown that ion beam sputtering can produce YBCO films of comparable quality to those produced by laser ablation or dc magnetron sputtering. Typical film properties are Tco = 91 K and Jc (77 K) = 106 A cm−2. It appears that the oxygen gas pressure during the postdeposition cooldown has a more important influence on film properties than the oxygen partial pressure during deposition.

Reactive evaporation of BaF2 in water vapour for in situ growth of YBa2Cu3Ox thin films

1991 ◽  
Vol 69 (2) ◽  
pp. 131-136
Author(s):  
Yuan Gao ◽  
R. W. Cline ◽  
T. Tiedje
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Growth Temperature ◽  
Thermodynamic Model ◽  
Superconducting Thin Films ◽  
In Situ Growth ◽  
Equilibrium Thermodynamic ◽  
Source Materials ◽  
Conversion Temperature

The conversion of BaF2 thin films to BaO during deposition in an oxidizing ambient was investigated as a first step towards the in situ growth of superconducting thin films of YBa2Cu3Ox from Y, Cu, and BaF2 source materials. This conversion was found to occur at a temperature of 800 °C when BaF2 was evaporated in a partial pressure of H2O. The observed conversion temperature agrees well with an equilibrium thermodynamic model. Methods to reduce the growth temperature to the 600– 700 °C range are proposed.

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