Structure of La1.85Sr0.15CuO4 doped with Zn in high doping level

1996 ◽  
Vol 266 (3-4) ◽  
pp. 296-302 ◽  
Author(s):  
X.S. Wu ◽  
S.S. Jiang ◽  
N. Xu ◽  
F.M. Pan ◽  
X.R. Huang ◽  
...  
Keyword(s):  
Doping Level ◽  
High Doping Level

X-ray diffraction studies on La1.85Sr0.15CuO4 doped with Mg in high doping level

1997 ◽  
Vol 282-287 ◽  
pp. 787-788 ◽  
Author(s):  
X.S. Wu ◽  
Z.Q. Mao ◽  
J. Lin ◽  
W.M. Chen ◽  
X. Jin ◽  
...  
Keyword(s):  
Doping Level ◽  
X Ray Diffraction ◽  
High Doping Level ◽  
X Ray

Structure studies of La1.85Sr0.15CuO4 doped with mg at high doping level

1997 ◽  
Vol 10 (2) ◽  
pp. 159-164 ◽  
Author(s):  
X. S. Wu ◽  
J. Lin ◽  
W. J. Liu ◽  
W. M. Chen ◽  
X. Jin ◽  
...  
Keyword(s):  
Doping Level ◽  
High Doping Level

scholarly journals Electrochemical performance of activated carbon fiber with hydrogen bond-induced high sulfur/nitrogen doping

RSC Advances ◽  
2020 ◽  
Vol 10 (62) ◽  
pp. 37631-37643 ◽  
Author(s):  
Chaohui Ruan ◽  
Yibing Xie
Keyword(s):  
Hydrogen Bond ◽  
Activated Carbon ◽  
Carbon Fiber ◽  
Thermal Treatment ◽  
Electrochemical Performance ◽  
Doping Level ◽  
Nitrogen Doping ◽  
Activated Carbon Fiber ◽  
High Doping Level ◽  
Co Doped

Sulfur/nitrogen co-doped activated carbon fiber is prepared by thermal treatment of thiourea-bonded hydroxyl-rich carbon fiber, which achieves high doping level and electrochemical performance.

Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

scholarly journals Copper photoelectrodeposition onto boron doped diamond electrodes at different doping level to enhance nitrate electroreduction.

2012 ◽  
Vol 1395 ◽  
Author(s):  
A. B. Couto ◽  
M. R. Baldan ◽  
N. G. Ferreira
Keyword(s):  
Nitrate Reduction ◽  
Doping Level ◽  
Diamond Films ◽  
Diamond Electrodes ◽  
Boron Doped Diamond ◽  
Buffer Solution ◽  
Solution Ph ◽  
High Doping Level ◽  
Copper Particles ◽  
Boron Doped

ABSTRACTPhotoelectrodeposition of copper on boron-doped diamond films (BDD) was investigated. In this work, two different doped films were analyzed. Copper particles were deposited in the potentiostat mode and under UV irradiation. The BDD film as-grown and the BDD film modifed with Cu (Cu/BDD) on the surface were characterized by Raman Spectroscopy and Scanning Electron Microscopy (SEM) respectivily. These electrodes were tested as electrocatalysts for nitrate reduction in Britton-Robinson buffer solution (pH=3). Electrochemical measurements showed that the electrode with high doping level displayed the best electrocatalytic activity.

Microstructures of La1.85Sr0.15CuO4 doped with Ni at high doping level

1996 ◽  
Vol 271 (3-4) ◽  
pp. 331-338 ◽  
Author(s):  
X.S Wu ◽  
S.S Jiang ◽  
F.M Pan ◽  
J Lin ◽  
N Xu ◽  
...  
Keyword(s):  
Doping Level ◽  
High Doping Level

scholarly journals Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

2013 ◽  
Vol 51 ◽  
pp. 87-93 ◽  
Author(s):  
L.K. Orlov ◽  
A.A.Mel’ nikova ◽  
M.L. Orlov ◽  
N.A. Alyabina ◽  
N.L. Ivina ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Doping Level ◽  
High Doping Level

Microstructural variations of YBa2Cu3Oy doped with Ca at high doping level

1998 ◽  
Vol 309 (1-2) ◽  
pp. 25-32 ◽  
Author(s):  
X.S. Wu ◽  
S.S. Jiang ◽  
J. Lin ◽  
J.S. Liu ◽  
W.M. Chen ◽  
...  
Keyword(s):  
Doping Level ◽  
High Doping Level

Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level

2014 ◽  
Vol 48 (7) ◽  
pp. 942-953
Author(s):  
M. L. Orlov ◽  
Zs. J. Horvath ◽  
N. L. Ivina ◽  
V. N. Neverov ◽  
L. K. Orlov
Keyword(s):  
Electron Transport ◽  
Doping Level ◽  
High Doping Level

Magnetic Property of Hole-Doped Double Perovskite Compound

2013 ◽  
Vol 464 ◽  
pp. 50-53
Author(s):  
Suo Jia Yuan ◽  
Qin Zhang ◽  
Hai Bo Sun ◽  
Hui Wang
Keyword(s):  
Crystal Structure ◽  
Magnetic Properties ◽  
Doping Level ◽  
Single Phase ◽  
Magnetic Measurements ◽  
Double Perovskite ◽  
Cation Ordering ◽  
High Doping Level ◽  
Xrd Pattern ◽  
X Ray

Crystal structure and magnetic properties of hole-doped double perovskite compounds (Sr, Na)2FeMoO6 have been investigated by means of X-ray powder diffraction (XRD) and magnetic measurements. XRD pattern indicates that all the samples are of single phase and belong to the space group I4/m. The degree of cation ordering in the Na-doped Sr2FeMoO6 compounds shows a non-monotonic variation with the doping level, increasing from x=0 to x=0.03 and decreasing slightly with further increase of the doping. However, the Curie temperature of the compound decreases at low doping level and increases at high doping level.

Sign in / Sign up

Export Citation Format

Share Document