Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy

1992 ◽  
Vol 12 (1-2) ◽  
pp. 177-184 ◽  
Author(s):  
T. Lohner ◽  
W. Skorupa ◽  
M. Fried ◽  
K. Vedam ◽  
N. Nguyen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Spectroscopic Ellipsometry ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Silicon On Insulator ◽  
Cross Sectional ◽  
Transmission Electron

Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High in Content

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Vantomme ◽  
M.F. Wu ◽  
S. Hogg ◽  
G. Langouche ◽  
K. Jacobs ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Structural Properties ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Indium Concentration ◽  
Transmission Electron ◽  
Peak Energy

AbstractRutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large numberof distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the lightemitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

2000 ◽  
Vol 5 (S1) ◽  
pp. 703-709
Author(s):  
A. Vantomme ◽  
M.F. Wu ◽  
S. Hogg ◽  
G. Langouche ◽  
K. Jacobs ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Structural Properties ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Light Emitting ◽  
Indium Concentration ◽  
Transmission Electron ◽  
Peak Energy

Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

Instability of Nanocavities in Disordered and Amorphous Silicon Under Ion Irradiation

1998 ◽  
Vol 540 ◽  
Author(s):  
X. Zhu ◽  
J.S. Williams ◽  
J.C. McCallum
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Irradiation Dose ◽  
Crystalline Silicon ◽  
Ion Irradiation ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Open Volume ◽  
Transmission Electron

AbstractIt has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

Feasibility of Simox Material Quality Determination Using Spectroellipsometry: Comparison With Raman And Planar View Transmission Electron Microscopy

1991 ◽  
Vol 235 ◽  
Author(s):  
G. M. Crean ◽  
S. Lyncrt ◽  
R. Greef ◽  
J. Stoemenos ◽  
U. Rossow ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Response Model ◽  
Density Measurements ◽  
Substrate Quality ◽  
Transmission Electron

ABSTRACTOne of the most promising silicon on insulator (SOI) fabrication techniques under development is Separation by IMplanted OXygen (SIMOX) substrates. The objective of this paper is to evaluate the feasability of employing spectroscopic ellipsometry (SE) for the determination of SIMOX substrate quality. Defect density measurements obtained from planar view transmission electron microscopy (TEM) studies are presented and concur with the Raman experimental results. The need for the development of a more sophisticated ellipsometric optical response model to mirror the complexity of the annealed Si overlayer microstructure is demonstrated.

Non-Destructive Characterisation of Rapid Thermally Annealed N+-Doped Polysilicon Using Spectroscopic Ellipsometry

1995 ◽  
Vol 406 ◽  
Author(s):  
R. T. Carline ◽  
W. Y. Leong ◽  
A. G. Cullis ◽  
M. R. Houlton ◽  
D. A. Hope
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Impurity Distribution ◽  
Refractive Indices ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Non Destructive ◽  
Secondary Ion ◽  
Anneal Temperature

AbstractThe use of spectroscopic ellipsometry (SE) to characterise the effects of rapid thermal annealing on Si implanted with phosphorous and phosphorous with fluorine are presented. Variations in the measured SE spectra with anneal temperature and presence/absence of fluorine are clearly observed. Spectra are successfully modelled using refractive indices which are graded with depth. Comparison with cross-sectional transmission-electron microscopy and secondary ion mass spectroscopy show that the results can be correlated with both the crystallinity and impurity distribution in the poly-Si.

Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis

1986 ◽  
Vol 77 ◽  
Author(s):  
J. A. Woollam ◽  
P. G. Snyder ◽  
A. W. McCOrmick ◽  
A. K. Rai ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering ◽  
Angle Of Incidence ◽  
Gaas Sample ◽  
Cross Sectional ◽  
Variable Angle ◽  
Transmission Electron ◽  
Thickness Measurements

ABSTRACTVariable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.

Sign in / Sign up

Export Citation Format

Share Document