Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High in Content

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Vantomme ◽  
M.F. Wu ◽  
S. Hogg ◽  
G. Langouche ◽  
K. Jacobs ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Structural Properties ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Indium Concentration ◽  
Transmission Electron ◽  
Peak Energy

AbstractRutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large numberof distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the lightemitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

2000 ◽  
Vol 5 (S1) ◽  
pp. 703-709
Author(s):  
A. Vantomme ◽  
M.F. Wu ◽  
S. Hogg ◽  
G. Langouche ◽  
K. Jacobs ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Structural Properties ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Light Emitting ◽  
Indium Concentration ◽  
Transmission Electron ◽  
Peak Energy

Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

Instability of Nanocavities in Disordered and Amorphous Silicon Under Ion Irradiation

1998 ◽  
Vol 540 ◽  
Author(s):  
X. Zhu ◽  
J.S. Williams ◽  
J.C. McCallum
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Irradiation Dose ◽  
Crystalline Silicon ◽  
Ion Irradiation ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Open Volume ◽  
Transmission Electron

AbstractIt has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis

1986 ◽  
Vol 77 ◽  
Author(s):  
J. A. Woollam ◽  
P. G. Snyder ◽  
A. W. McCOrmick ◽  
A. K. Rai ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering ◽  
Angle Of Incidence ◽  
Gaas Sample ◽  
Cross Sectional ◽  
Variable Angle ◽  
Transmission Electron ◽  
Thickness Measurements

ABSTRACTVariable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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