Secondary electron emission spectroscopy and total electron yield measurements for the assessment of near-surface damage in diamond

ABSTRACTDiamond exhibits high secondary-electron yields which vary strongly with sample preparation and sample treatment. In this study, we identify some of the factors that govern the secondary-electron emission yield of diamond. Comparative studies are made with polycrystalline diamond films having different dopants (boron or nitrogen), dopant concentrations and surface conditions (hydrogen-terminated or oxidized). In these studies, the total electron yield as a function of the incident-electron energy and the energy distribution of the secondary emitted electrons are measured. The results show that both electrical conductivity and hydrogen-termination play essential roles in the secondary-electron emission process. For hydrogen-terminated samples, the energy distribution shows a large and narrow peak at the onset of electron emission. The long mean-free path of the secondary electrons and the low or negative electron affinity are essential to the exceedingly high electron yield of diamond.

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Contribution from recoiling atoms in secondary electron emission induced by slow highly charged ions from tungsten surface

Laser and Particle Beams ◽

10.1017/s026303461200064x ◽

2012 ◽

Vol 30 (4) ◽

pp. 707-711 ◽

Cited By ~ 3

Author(s):

Lixia Zeng ◽

Zhongfeng Xu ◽

Yongtao Zhao ◽

Yuyu Wang ◽

Jianguo Wang ◽

...

Keyword(s):

Electron Emission ◽

Secondary Electron Emission ◽

Projectile Energy ◽

Total Electron Yield ◽

Projectile Velocity ◽

Total Electron ◽

Electron Yield ◽

Emission Yield ◽

Tungsten Surface ◽

Charged Ions

AbstractThe electron emission yield γ induced by Ne2+ and O2+ impacting on a clean tungsten surface has been measured. The range of projectile energy is from 3 keV/u to 14 keV/u. The total electron yield gradually increases with the projectile velocity. It is found simultaneously that the total electron yield for O2+ is larger than the total electron yield for Ne2+, which is opposite to the results for higher projectile velocity. After considering the contribution from recoiling atoms to the energy distribution and electron emission yield, we find that recoiling atoms are of crucial importance in electron emission in our energy range. Thus, the unexpected results in our experiment can be explained successfully.

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Charge effect in secondary electron emission from silicon surface induced by slow neon ions

Laser and Particle Beams ◽

10.1017/s0263034612000171 ◽

2012 ◽

Vol 30 (2) ◽

pp. 319-324 ◽

Cited By ~ 6

Author(s):

Zhongfeng Xu ◽

Lixia Zeng ◽

Yongtao Zhao ◽

Jianguo Wang ◽

Yuyu Wang ◽

...

Keyword(s):

Kinetic Energy ◽

Charge State ◽

Electron Emission ◽

Secondary Electron Emission ◽

Normal Incidence ◽

Total Electron Yield ◽

Total Electron ◽

Electron Yield ◽

Emission Yield ◽

First Time

AbstractTotal electron emission yield for impact of slow Neq+(q = 2, 4, 6, 8) ions with various kinetic energy under normal incidence on n-type Si has been measured. It is shown that for the same charge state, the total electron yield γ increases linearly as the kinetic energy of projectile at impact increases, up to velocities corresponding to the “classical” threshold. Separation of kinetic electron yield γKE and potential electron yield γPE shows that γPE is proportional to the ion charge state and γKE increases linearly with projectile velocity. Finally, based on “single hole without hopping” hypothesis, the expression of the “CRF” F(q) is given, and the relation between γKE and q is obtained successfully for the first time, which is also a basis for judging whether the “trampoline effect” exists.

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