SURFACE STRUCTURE AFTER HIGH DOSE LIGHT ION BOMBARDMENT

1976 ◽  
pp. 531-539 ◽  
Author(s):  
R. Behrisch ◽  
M. Risch ◽  
J. Roth ◽  
B.M.U. Scherzer
Keyword(s):  
Surface Structure ◽  
Ion Bombardment ◽  
High Dose

Structural Characterization of Dynamic Annealing Effects of P+ Implanted SI

1985 ◽  
Vol 45 ◽  
Author(s):  
Marina Berti ◽  
A.V. Drigo ◽  
E. Gabilli ◽  
R. Lotti ◽  
G. Lulli ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Dose Rate ◽  
Structural Characterization ◽  
Ion Bombardment ◽  
High Dose Rate ◽  
High Dose ◽  
Temperature Range ◽  
Annealing Effects ◽  
Increasing Temperature

ABSTRACTSome renarks about the mechanism for dynamic annealing during high dose rate P implantation of Si are reported. TEM observations and RBS channeling measurements show that the ion bombardment enhances the amorphous to crystalline transformation in the temperature range 200 ≤ T ≤ 600°C. It is found that the ratio between the observed recrystalli-zation velocity and the thermal SPE velocity decreases with increasing temperature. This indicates that a transition temperature must exist between the ion-assisted recrystallization regime and the ?lermal SPE regime. For the energy (100 keV) and the dose rate (60,uA/cm2) used in our experiments the transition temperature is about 700°C.

A Model of a Combined Film Deposition and Ion Bombardment for Coatings Formation

1988 ◽  
Vol 128 ◽  
Author(s):  
Z. A. Iskanderova ◽  
T. D. Radjabov ◽  
R. Yu. Leiderman ◽  
F. K. Tukfatullin
Keyword(s):  
Mathematical Model ◽  
Ion Implantation ◽  
Ion Bombardment ◽  
Film Deposition ◽  
High Dose ◽  
Concentration Profiles ◽  
Coating Formation ◽  
The Mathematical Model

ABSTRACTThe mathematical model of a combined film deposition and and high dose ion implantation for coating formation has been developed. Calculations of concentration profiles of implanted element in the film and substrate depending on different parameters of the model have been carried out.

Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper

1997 ◽  
Vol 89 (1-2) ◽  
pp. 90-96 ◽  
Author(s):  
A.D. Pogrebnjak ◽  
S.M. Duvanov ◽  
A.D. Mikhaliov ◽  
V.I. Lavrentiev ◽  
V.V. Stayko ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Surface Structure ◽  
High Dose ◽  
Near Surface ◽  
Single Crystal Copper

Graphitization of a diamond surface upon high-dose ion bombardment

2016 ◽  
Vol 80 (2) ◽  
pp. 156-160 ◽  
Author(s):  
N. N. Andrianova ◽  
A. M. Borisov ◽  
V. A. Kazakov ◽  
E. S. Mashkova ◽  
Yu. N. Palyanov ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Diamond Surface ◽  
High Dose
Sign in / Sign up

Export Citation Format

Share Document