Intrinsic defects leading to increased erythrocyte destruction

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

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The Interplay between Drivers of Erythropoiesis and Iron Homeostasis in Rare Hereditary Anemias: Tipping the Balance

International Journal of Molecular Sciences ◽

10.3390/ijms22042204 ◽

2021 ◽

Vol 22 (4) ◽

pp. 2204

Author(s):

Simon Grootendorst ◽

Jonathan de Wilde ◽

Birgit van Dooijeweert ◽

Annelies van Vuren ◽

Wouter van Solinge ◽

...

Keyword(s):

Iron Overload ◽

Iron Metabolism ◽

Iron Homeostasis ◽

Significant Problem ◽

Blood Transfusions ◽

Intrinsic Defects ◽

Chronic Anemia ◽

Erythroid Development ◽

Disease Specific

Rare hereditary anemias (RHA) represent a group of disorders characterized by either impaired production of erythrocytes or decreased survival (i.e., hemolysis). In RHA, the regulation of iron metabolism and erythropoiesis is often disturbed, leading to iron overload or worsening of chronic anemia due to unavailability of iron for erythropoiesis. Whereas iron overload generally is a well-recognized complication in patients requiring regular blood transfusions, it is also a significant problem in a large proportion of patients with RHA that are not transfusion dependent. This indicates that RHA share disease-specific defects in erythroid development that are linked to intrinsic defects in iron metabolism. In this review, we discuss the key regulators involved in the interplay between iron and erythropoiesis and their importance in the spectrum of RHA.

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Intrinsic Defects in LiMn2O4: First-Principles Calculations

ACS Omega ◽

10.1021/acsomega.1c01162 ◽

2021 ◽

Author(s):

Xu Li ◽

Jianchuan Wang ◽

Shiwei Zhang ◽

Lixian Sun ◽

Weibin Zhang ◽

...

Keyword(s):

First Principles ◽

First Principles Calculations ◽

Intrinsic Defects

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Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

Physical Review B ◽

10.1103/physrevb.103.195202 ◽

2021 ◽

Vol 103 (19) ◽

Author(s):

Peter A. Schultz ◽

Renee M. Van Ginhoven ◽

Arthur H. Edwards

Keyword(s):

Silicon Carbide ◽

Theoretical Study ◽

Intrinsic Defects ◽

Cubic Silicon Carbide

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Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽

10.1557/adv.2016.544 ◽

2016 ◽

Vol 1 (37) ◽

pp. 2635-2640 ◽

Cited By ~ 5

Author(s):

Adele Moatti ◽

Reza Bayati ◽

Srinivasa Rao Singamaneni ◽

Jagdish Narayan

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetic Properties ◽

Frequency Factor ◽

Misfit Strain ◽

Buffer Layers ◽

Intrinsic Defects ◽

Domain Matching Epitaxy ◽

Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

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