Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation

1996 ◽  
pp. 281-288
Author(s):  
E. Glaser ◽  
T. Bachmann ◽  
R. Schulz ◽  
S. Schippel ◽  
U. Richter
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Layer By Layer ◽  
Epitaxial Regrowth

Dopants in LiNbO3: Lattice Site Location, Ion Implantation and Epitaxial Regrowth

1991 ◽  
Vol 244 ◽  
Author(s):  
L. Rebouta ◽  
J. C. Soares ◽  
M. F. Da Silva ◽  
J. A. Sanz-Garcia ◽  
E. Dieguez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Integrated Optics ◽  
Lattice Site ◽  
Ion Beam ◽  
Lattice Location ◽  
Integrated Optics Devices ◽  
Site Location ◽  
Co Doping ◽  
Epitaxial Regrowth

ABSTRACTIon-beam/channeling data for the lattice location of Ti, Hf, Er and Nd in LiNbO3 and LiNbO3: Mg are presented. These impurities are relevant in relation to waveguide and integrated optics devices. It is shown that co-doping with Mg markedly influences the lattice location observed in LiNbO3. The amorphization and recrystalization process following Hf implantation and annealing are also discussed.

Amorphization of elemental and compound semiconductors upon ion implantation

1991 ◽  
Vol 6 (5) ◽  
pp. 1048-1054 ◽  
Author(s):  
K.S. Jones ◽  
C.J. Santana
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Density Distribution ◽  
Bond Energy ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Amorphous Layer ◽  
Thermochemical Data ◽  
Energy Estimates ◽  
Cross Sectional

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si+ at doses between 1 × 1014/cm2 and 1 × 1016/cm2. A dose of 1 × 1015/cm2 minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the amorphous layer at this dose was compared with Monte Carlo damage density distribution calculations (TRIM'90). The threshold damage density (TDD) necessary for amorphization was determined for each compound. The values of the threshold damage density vary from as low as 2.4 × 1019 keV/cm3 for InAs up to 7.3 × 1020 keV/cm3 for AlAs. ZnSe never became amorphous and GaSb exhibited an unusual disordering after the highest dose. The values of the threshold damage density for the various compositions were compared with known thermochemical data and several bond energy estimates. No single calculation explained all of the trends observed.

Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors

1997 ◽  
Vol 248-249 ◽  
pp. 79-86 ◽  
Author(s):  
E. Glaser ◽  
T. Fehlhaber ◽  
Robert Schulz ◽  
T. Bachmann
Keyword(s):  
Ion Beam ◽  
Compound Semiconductors ◽  
Epitaxial Regrowth

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

scholarly journals A Study on the Wettability of Ion-Implanted Stainless and Bearing Steels

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 208 ◽  
Author(s):  
Xinchun Chen ◽  
Xuan Yin ◽  
Jie Jin
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Ion Beam ◽  
Bearing Steel ◽  
Contact Angles ◽  
Electrochemical Technique ◽  
Near Surface ◽  
Thermodynamic Stabilization ◽  
Deposition Processes ◽  
Surface Modified

To satisfy the harsh service demand of stainless steel and aviation bearing steel, the anticorrosion and wettability behaviors of 9Cr18 stainless steel and M50 bearing steel tailored by ion beam surface modification technology were experimentally investigated. By controlling the ion implantation (F+, N+, N+ + Ti+) or deposition processes, different surface-modified layers and ceramic layers or composite layers with both effects (ion implantation and deposition processes) were obtained on metal surfaces. The wettability was characterized by a contact angle instrument, and the thermodynamics stabilization of ion implantation-treated metals in corrosive solution was evaluated through an electrochemical technique. X-ray photoelectron spectroscopy (XPS) was employed for detecting the chemical bonding states of the implanted elements. The results indicated that ion implantation or deposition-induced surface-modified layers or coating layers could increase water contact angles, namely improving hydrophobicity as well as thermodynamic stabilization in corrosive medium. Meanwhile, wettability with lubricant oil was almost not changed. The implanted elements could induce the formation of new phases in the near-surface region of metals, and the wettability behaviors were closely related to the as-formed ceramic components and amorphous sublayer.

scholarly journals Application of Ion Beam Processing Technology in Production of Catalysts

1970 ◽  
Vol 2 (2) ◽  
Author(s):  
Mykola G. Bannikov, Javed A. Chattha ◽  
Vladimir N. Zlobin, Igor P. Vasilev, Jury A. Cherkasov and Piotr N. Gawrilenko
Keyword(s):  
Carbon Monoxide ◽  
Ion Implantation ◽  
Process Parameters ◽  
Noble Metals ◽  
Ion Beam ◽  
Processing Technology ◽  
Ceramic Substrates ◽  
Co Conversion ◽  
Complex Dependence ◽  
Different Shapes

In this paper, the applicability of Ion Beam Processing Technology for making catalysts has been inves-tigated. Ceramic substrates of different shapes and metal fibre tablets were implanted by platinum ions and tested in nitrogen oxides (NOx) and carbon monoxide (CO) conversion reactions. Effectiveness of the implanted catalysts was compared to that of the commercially produced platinum catalysts made by impregnation. Platinum-implanted catalyst having fifteen times less platinum content showed the same CO conversion efficiency as the commercially pro-duced catalyst. It was revealed that the effectiveness of the platinum-implanted catalyst has complex dependence on the process parameters and the optimum can be achieved by varying the ions energy and the duration of implantation. Investigation of the pore structure showed that ion implantation did not decrease the specific surface area of the catalyst.Key Words: Catalyst, Ion Implantation, Noble metals.

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