MBE Growth of Artificially-Layered Magnetic Metal Structures

1995 ◽  
pp. 623-668
Author(s):  
Robin F.C. Farrow ◽  
Ronald F. Marks ◽  
Gerald R. Harp ◽  
Dieter Weller ◽  
Thomas A. Rabedeau ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Metal Structures ◽  
Magnetic Metal

MBE growth of artificially-layered magnetic-metal structures on semiconductors and insulators

1993 ◽  
Vol 11 (4) ◽  
pp. 155-189 ◽  
Author(s):  
R.F.C. Farrow ◽  
R.F. Marks ◽  
G.R. Harp ◽  
D. Weller ◽  
T.A. Rabedeau ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Metal Structures ◽  
Magnetic Metal

MBE Growth of Artificially-Layered Magnetic Metal Structures on Semiconductors

1990 ◽  
Vol 187 ◽  
Author(s):  
R.F.C. Farrow ◽  
C.H. Lee
Keyword(s):  
Chemical Properties ◽  
Mbe Growth ◽  
Metal Structures ◽  
Magnetic Metal ◽  
Semiconductor Substrates ◽  
Recent Developments ◽  
Deposition Techniques ◽  
And Chemical Properties

AbstractIn this review, recent developments in MBE growth of artificially-layered magnetic metal structures on semiconductor substrates are considered. It is seen that the ability to seed specific orientations of such structures and to probe their structural and chemical properties with a variety of in situ probes are key advantages of MBE over more conventional deposition techniques.

Low-temperature MBE growth of GaAs on magnetic metal substrates

1999 ◽  
Vol 201-202 ◽  
pp. 698-701 ◽  
Author(s):  
W. Van Roy ◽  
H. Akinaga ◽  
S. Miyanishi
Keyword(s):  
Low Temperature ◽  
Mbe Growth ◽  
Metal Substrates ◽  
Magnetic Metal

scholarly journals Microwave Magnon-Plasmon-Polaritons in the Ferromagnetic Metal–Screened Insulator Structure

2020 ◽  
Vol 65 (10) ◽  
pp. 939
Author(s):  
V. Yu. Malyshev ◽  
I. V. Zavislyak ◽  
G. A. Melkov ◽  
M. O. Popov ◽  
O. V. Prokopenko
Keyword(s):  
Characteristic Frequency ◽  
Ferromagnetic Metal ◽  
Surface Electromagnetic Wave ◽  
Metal Insulator ◽  
Metal Structures ◽  
A Value ◽  
Wave Resonator ◽  
Magnetic Metal ◽  
Structure Surface ◽  
Plasmon Polaritons

A possibility for surface magnon–plasmon–polaritons (SMPPs)–coupled microwave oscillations of magnetization, electron density, and electromagnetic field–to exist in real ferromagnetic metal–insulator–ideal non-magnetic metal structures has been analyzed theoretically. The developed theory predicts that the effective formation of SMPPs is possible only at certain values of the external dc magnetic field and must be accompanied by a shift in the characteristic frequency of the resonance plasmon-polariton systems. A theoretical estimation of the frequency shift for SMPPs in the structure “surface electromagnetic wave resonator made of permalloy–vacuum–ideal metal” gives a value of ±45 MHz for a resonator with a characteristic frequency of 10 GHz, which seems sufficient for this effect to be observed experimentally.

Epitaxial growth of Pt on basal-plane sapphire: a seed film for artificially layered magnetic metal structures

1993 ◽  
Vol 133 (1-2) ◽  
pp. 47-58 ◽  
Author(s):  
R.F.C. Farrow ◽  
G.R. Harp ◽  
R.F. Marks ◽  
T.A. Rabedeau ◽  
M.F. Toney ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Metal Structures ◽  
Magnetic Metal

Microstructural investigation of surface roughness in MBE-grown AlAs

1995 ◽  
Vol 53 ◽  
pp. 454-455
Author(s):  
R. Rajesh ◽  
R. Droopad ◽  
C. H. Kuo ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Growth Control ◽  
Native Oxide ◽  
Effusion Cell ◽  
Surface Oxide Layer ◽  
Microstructural Investigation ◽  
Mbe Growth ◽  
Film Substrate ◽  
And Control

Knowledge of material pseudodielectric functions at MBE growth temperatures is essential for achieving in-situ, real time growth control. This allows us to accurately monitor and control thicknesses of the layers during growth. Undesired effusion cell temperature fluctuations during growth can thus be compensated for in real-time by spectroscopic ellipsometry. The accuracy in determining pseudodielectric functions is increased if one does not require applying a structure model to correct for the presence of an unknown surface layer such as a native oxide. Performing these measurements in an MBE reactor on as-grown material gives us this advantage. Thus, a simple three phase model (vacuum/thin film/substrate) can be used to obtain thin film data without uncertainties arising from a surface oxide layer of unknown composition and temperature dependence.In this study, we obtain the pseudodielectric functions of MBE-grown AlAs from growth temperature (650°C) to room temperature (30°C). The profile of the wavelength-dependent function from the ellipsometry data indicated a rough surface after growth of 0.5 μm of AlAs at a substrate temperature of 600°C, which is typical for MBE-growth of GaAs.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

MBE growth and characterization of ZnS1−xTex

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 66-69 ◽  
Author(s):  
K Takahashi
Keyword(s):  
Mbe Growth
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