Realization of high thermoelectric performance in p-type unfilled ternary skutterudites FeSb2+xTe1−x via band structure modification and significant point defect scattering

Mohite-type ternary sulfide Cu2SnS3, which has been intensively studied in the photovoltaic field, has recently attracted much attention as an outstanding p-type eco-friendly thermoelectric material.

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Realizing High Thermoelectric Performance in p-Type SnSe through Crystal Structure Modification

Journal of the American Chemical Society ◽

10.1021/jacs.8b12450 ◽

2018 ◽

Vol 141 (2) ◽

pp. 1141-1149 ◽

Cited By ~ 50

Author(s):

Bingchao Qin ◽

Dongyang Wang ◽

Wenke He ◽

Yang Zhang ◽

Haijun Wu ◽

...

Keyword(s):

Crystal Structure ◽

Thermoelectric Performance ◽

Structure Modification ◽

P Type

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Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

Journal of Materials Chemistry A ◽

10.1039/c8ta08920e ◽

2019 ◽

Vol 7 (3) ◽

pp. 1045-1054 ◽

Cited By ~ 26

Author(s):

Hasbuna Kamila ◽

Prashant Sahu ◽

Aryan Sankhla ◽

Mohammad Yasseri ◽

Hoang-Ngan Pham ◽

...

Keyword(s):

Band Structure ◽

Transport Properties ◽

Carrier Concentration ◽

Solid Solutions ◽

Figure Of Merit ◽

Electronic Band Structure ◽

Thermoelectric Performance ◽

Electronic Band ◽

P Type ◽

Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

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Optimization of thermoelectric performance of SrSi2-based alloys via the modification in band structure and phonon-point-defect scattering

Frontiers in Chemistry ◽

10.3389/fchem.2014.00106 ◽

2014 ◽

Vol 2 ◽

Cited By ~ 19

Author(s):

Yung-Kang Kuo ◽

Balakrishnan Ramachandran ◽

Chin-Shan Lue

Keyword(s):

Band Structure ◽

Point Defect ◽

Thermoelectric Performance

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Anion exchanged Cl doping achieving the band sharpening and low lattice thermal conductivity for improving thermoelectric performance in SnTe

Inorganic Chemistry Frontiers ◽

10.1039/d1qi00727k ◽

2021 ◽

Author(s):

Quanxin Yang ◽

Tu Lyu ◽

Yuan Dong ◽

Bohang Nan ◽

Jian Tie ◽

...

Keyword(s):

Thermal Conductivity ◽

Band Structure ◽

Lattice Thermal Conductivity ◽

Thermoelectric Performance ◽

Structure Modification

Band structure modification plays an important role in improving thermoelectric performance of SnTe. Herein the band sharpening as one of band structure modifications is achieved by Cl doping reduces the...

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Enhancement of the thermoelectric performance of bulk SnTe alloys via the synergistic effect of band structure modification and chemical bond softening

Journal of Materials Chemistry A ◽

10.1039/c7ta03359a ◽

2017 ◽

Vol 5 (27) ◽

pp. 14165-14173 ◽

Cited By ~ 31

Author(s):

Hongchao Wang ◽

Junphil Hwang ◽

Chao Zhang ◽

Teng Wang ◽

Wenbin Su ◽

...

Keyword(s):

Synergistic Effect ◽

Band Structure ◽

Seebeck Coefficient ◽

Effective Mass ◽

Chemical Bond ◽

Resonance Level ◽

Thermoelectric Performance ◽

Energy Separation ◽

Structure Modification ◽

Bond Softening

Seebeck coefficient of SnTe is largely enhanced by large band effective mass or decrease of energy separation through synergistic effect including resonance level and band convergence.

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Realizing n-type gete through suppressing the formation of cation vacancies and bi-doping*

Chinese Physics Letters ◽

10.1088/0256-307x/38/12/127201 ◽

2021 ◽

Vol 38 (12) ◽

pp. 127201

Author(s):

Min Zhang ◽

Chaoliang Hu ◽

Qi Zhang ◽

Feng Liu ◽

Shen Han ◽

...

Keyword(s):

Band Structure ◽

Formation Energy ◽

Electronic Band Structure ◽

Hole Concentration ◽

Thermoelectric Performance ◽

Electronic Band ◽

Cation Vacancies ◽

Bi Doping ◽

High Hole Concentration ◽

P Type

It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure. However, n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole concentration of about 1021 cm−3. In the present work, the formation energy of cation vacancies of GeTe is increased through alloying PbSe, and further Bi-doping enables the change of carrier conduction from p-type to n-type. As a result, the n-type thermoelectric performance is obtained in GeTe-based materials. A peak zT of 0.34 at 525 K is obtained for (Ge0.6Pb0.4)0.88Bi0.12Te0.6Se0.4. These results highlight the realization of n-type doping in GeTe and pave the way for further optimization of the thermoelectric performance of n-type GeTe.

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