Cobalt-doping in Cu2SnS3: enhanced thermoelectric performance by synergy of phase transition and band structure modification

2017 ◽  
Vol 5 (44) ◽  
pp. 23267-23275 ◽  
Author(s):  
Huiwen Zhao ◽  
Xiaoxuan Xu ◽  
Chao Li ◽  
Ruoming Tian ◽  
Ruizhi Zhang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Band Structure ◽  
Thermoelectric Material ◽  
Thermoelectric Performance ◽  
Cobalt Doping ◽  
Structure Modification ◽  
Ternary Sulfide ◽  
P Type

Mohite-type ternary sulfide Cu2SnS3, which has been intensively studied in the photovoltaic field, has recently attracted much attention as an outstanding p-type eco-friendly thermoelectric material.

Realizing High Thermoelectric Performance in p-Type SnSe through Crystal Structure Modification

2018 ◽  
Vol 141 (2) ◽  
pp. 1141-1149 ◽  
Author(s):  
Bingchao Qin ◽  
Dongyang Wang ◽  
Wenke He ◽  
Yang Zhang ◽  
Haijun Wu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thermoelectric Performance ◽  
Structure Modification ◽  
P Type

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

High thermoelectric performance from optimization of hole-doped CuInTe2

2016 ◽  
Vol 18 (8) ◽  
pp. 5925-5931 ◽  
Author(s):  
Gang Zhou ◽  
Dong Wang
Keyword(s):  
Thermoelectric Material ◽  
Thermoelectric Performance ◽  
P Type

p-Type CuInTe2 is predicted to be a promising thermoelectric material at medium temperatures by optimization of doping at the In-site.

High thermoelectric performance of n-type Bi2Te2.7Se0.3via nanostructure engineering

2018 ◽  
Vol 6 (20) ◽  
pp. 9642-9649 ◽  
Author(s):  
D. Li ◽  
J. M. Li ◽  
J. C. Li ◽  
Y. S. Wang ◽  
J. Zhang ◽  
...  
Keyword(s):  
Thermoelectric Material ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Commercial Applications ◽  
P Type

BiSbTe has been realized as an ideal p-type thermoelectric material near room temperature; however, its commercial applications are largely restricted by its n-type counterpart that exhibits relatively inferior thermoelectric performance.

The effect of doping on thermoelectric performance of p-type SnSe: Promising thermoelectric material

2016 ◽  
Vol 668 ◽  
pp. 152-158 ◽  
Author(s):  
Niraj Kumar Singh ◽  
Sivaiah Bathula ◽  
Bhasker Gahtori ◽  
Kriti Tyagi ◽  
D. Haranath ◽  
...  
Keyword(s):  
Thermoelectric Material ◽  
Thermoelectric Performance ◽  
P Type ◽  
Effect Of Doping

Anion exchanged Cl doping achieving the band sharpening and low lattice thermal conductivity for improving thermoelectric performance in SnTe

2021 ◽  
Author(s):  
Quanxin Yang ◽  
Tu Lyu ◽  
Yuan Dong ◽  
Bohang Nan ◽  
Jian Tie ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Band Structure ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Structure Modification

Band structure modification plays an important role in improving thermoelectric performance of SnTe. Herein the band sharpening as one of band structure modifications is achieved by Cl doping reduces the...

Enhancement of the thermoelectric performance of bulk SnTe alloys via the synergistic effect of band structure modification and chemical bond softening

2017 ◽  
Vol 5 (27) ◽  
pp. 14165-14173 ◽  
Author(s):  
Hongchao Wang ◽  
Junphil Hwang ◽  
Chao Zhang ◽  
Teng Wang ◽  
Wenbin Su ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Effective Mass ◽  
Chemical Bond ◽  
Resonance Level ◽  
Thermoelectric Performance ◽  
Energy Separation ◽  
Structure Modification ◽  
Bond Softening

Seebeck coefficient of SnTe is largely enhanced by large band effective mass or decrease of energy separation through synergistic effect including resonance level and band convergence.

scholarly journals Localized double phonon scattering and DOS induced thermoelectric enhancement of degenerate nonstoichiometric Li1−xNbO2 compounds

RSC Advances ◽  
2017 ◽  
Vol 7 (84) ◽  
pp. 53255-53264 ◽  
Author(s):  
Jamil Ur Rahman ◽  
Nguyen Van Du ◽  
Gul Rahman ◽  
V. M. García-Suárez ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Significant Role ◽  
Phonon Scattering ◽  
Thermoelectric Performance ◽  
Oxide Thermoelectric Material ◽  
P Type

We report the synthesis and thermoelectric properties of a new p-type oxide thermoelectric material (Li1−xNbO2, with x = 0–0.6), in which Li-vacancies play a significant role in the enhancement of the thermoelectric performance.

Realizing n-type gete through suppressing the formation of cation vacancies and bi-doping*

2021 ◽  
Vol 38 (12) ◽  
pp. 127201
Author(s):  
Min Zhang ◽  
Chaoliang Hu ◽  
Qi Zhang ◽  
Feng Liu ◽  
Shen Han ◽  
...  
Keyword(s):  
Band Structure ◽  
Formation Energy ◽  
Electronic Band Structure ◽  
Hole Concentration ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
Cation Vacancies ◽  
Bi Doping ◽  
High Hole Concentration ◽  
P Type

It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure. However, n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole concentration of about 1021 cm−3. In the present work, the formation energy of cation vacancies of GeTe is increased through alloying PbSe, and further Bi-doping enables the change of carrier conduction from p-type to n-type. As a result, the n-type thermoelectric performance is obtained in GeTe-based materials. A peak zT of 0.34 at 525 K is obtained for (Ge0.6Pb0.4)0.88Bi0.12Te0.6Se0.4. These results highlight the realization of n-type doping in GeTe and pave the way for further optimization of the thermoelectric performance of n-type GeTe.

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