The formation and accumulation of radiation-induced defects and the role of lamellar interfaces in radiation damage of titanium aluminum alloy irradiated with Kr-ions at room temperature

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

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Mechanism of radiation-induced defects in SiO2: The role of hydrogen

physica status solidi (c) ◽

10.1002/pssc.200673717 ◽

2007 ◽

Vol 4 (3) ◽

pp. 901-904 ◽

Cited By ~ 11

Author(s):

Roushdey Salh ◽

H.-J. Fitting

Keyword(s):

Radiation Induced ◽

Induced Defects

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Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Journal of Applied Physics ◽

10.1063/1.1384855 ◽

2001 ◽

Vol 90 (3) ◽

pp. 1170-1178 ◽

Cited By ~ 44

Author(s):

Aurangzeb Khan ◽

Masafumi Yamaguchi ◽

Y. Ohshita ◽

N. Dharmarasu ◽

K. Araki ◽

...

Keyword(s):

Solar Cells ◽

Production Rates ◽

Radiation Induced ◽

Silicon Materials ◽

Induced Defects

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Impact of Boron and Gallium on Defects Production in Silicon

MRS Proceedings ◽

10.1557/proc-650-r9.7/o14.7 ◽

2000 ◽

Vol 650 ◽

Author(s):

Aurangzeb Khan ◽

Nethaji Dharmarasu ◽

Masafumi Yamaguchi ◽

Kenji Araki ◽

Tuong K. Vu ◽

...

Keyword(s):

Recombination Center ◽

Valuable Insight ◽

Electron Level ◽

Boron Doped ◽

Hole Level ◽

Radiation Induced ◽

Induced Defects ◽

The Impact ◽

Insight Into

ABSTRACTWe report the results of comparison of radiation-induced defects (1 MeV electrons) in n+-p-p+ Si diodes doped with gallium or boron ranging in concentration from 8 × 1014 to 5 × 1016 cm-3, together with the impact of oxygen on radiation –induced defects. Present results provide evidence for new defects states in addition to those previously reported in gallium- and boron-doped Si. The combined boron and gallium data provide enough information to gain valuable insight into the role of the dopants on radiation-induced defects in Si. The interesting new future of our results is that the gallium appears to strongly suppress the radiation induced defect, especially hole level EV+0.36 eV, which is thought to act as a recombination center. Similarly the dominant electron level at EC-0.18 eV in B-doped Si (which act as a donor) has not been observed in Ga-doped CZ-grown Si.

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Radiation induced defects in silicon at room temperature

phys stat sol (a) ◽

10.1002/pssa.2210580141 ◽

1980 ◽

Vol 58 (1) ◽

pp. K1-K3 ◽

Cited By ~ 4

Author(s):

M. Pasemann ◽

P. Werner

Keyword(s):

Room Temperature ◽

Radiation Induced ◽

Induced Defects

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Recent Advances in Understanding Helium Embrittlement in Metals

MRS Bulletin ◽

10.1557/s0883769400069116 ◽

1986 ◽

Vol 11 (4) ◽

pp. 14-18 ◽

Cited By ~ 24

Author(s):

M.I. Baskes

Keyword(s):

Radiation Damage ◽

Fusion Energy ◽

Bubble Formation ◽

Pair Potential ◽

Damage Threshold ◽

Transmission Electron ◽

Helium Embrittlement ◽

Atomistic Calculations ◽

Radiation Induced ◽

Induced Defects

Helium is formed in metals as a secondary product of fission/fusion energy technology. Even though helium is chemically inert and essentially insoluble in metals, under specific exposure conditions it is known to cause them to lose their ductility. At high temperatures, helium atoms produced from the transmutation of 10B or from a two-step process with 58Ni in amounts as low as a few parts per million migrate to grain boundaries to cause inter-granular failure. Ion implantation of helium may cause a similar effect. More recently it has been found that helium produced from tritium decay at or slightly above room temperature also markedly degrades the mechanical properties of metals. In order to design alloys of the future it is necessary to understand the mechanisms responsible for this helium embrittlement.Early experiments found that helium is strongly trapped at radiation-produced defects in metals. Atomistic calculations using pair potential interactions verified these findings. It was initially thought that the helium embrittlement in metals was due to the trapping and subsequent bubble formation at radiation-induced defects. It has been shown, however, that helium may be trapped in metals even in the absence of radiation damage. Thomas et al. found that 3He generated at low temperatures from tritium decay remained trapped in nickel upon heating to 500°C. In both this experimentand a subsequentone in gold the helium was introduced without the production of radiation damage. In this second experiment Thomas used transmission electron microscopy to see in the gold small (10Å) bubbles that had been implanted with low-energy (sub-damage threshold) helium.

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High energy oxygen irradiation-induced defects in Fe-doped semi-insulating indium phosphide by positron annihilation technique

International Journal of Modern Physics B ◽

10.1142/s0217979217500199 ◽

2017 ◽

Vol 31 (04) ◽

pp. 1750019

Author(s):

S. Pan ◽

A. Mandal ◽

Md. A. Sohel ◽

A. K. Saha ◽

D. Das ◽

...

Keyword(s):

Indium Phosphide ◽

Positron Annihilation ◽

Room Temperature ◽

High Energy ◽

Average Lifetime ◽

Defect States ◽

Positron Trapping ◽

Radiation Induced ◽

Induced Defects ◽

Irradiation Induced Defects

Positron annihilation technique is applied to study the recovery of radiation-induced defects in 140 MeV oxygen (O[Formula: see text]) irradiated Fe-doped semi-insulating indium phosphide during annealing over a temperature region of 25[Formula: see text]C–650[Formula: see text]C. Lifetime spectra of the irradiated sample are fitted with three lifetime components. Trapping model analysis is used to characterize defect states corresponding to the de-convoluted lifetime values. After irradiation, the observed average lifetime of positron [Formula: see text] ps at room temperature is higher than the bulk lifetime by 21 ps which reveals the presence of radiation-induced defects in the material. A decrease in [Formula: see text] occurs during room temperature 25[Formula: see text]C to 200[Formula: see text]C indicating the dissociation of higher order defects, might be due to positron trapping in acceptor-type of defects ([Formula: see text]). A reverse annealing stage is found at temperature range of 250[Formula: see text]C–425[Formula: see text]C for [Formula: see text]-parameter probably due to the migration of vacancies and the formation of vacancy clusters. Increase in [Formula: see text]-parameter from 325[Formula: see text]C to 425[Formula: see text]C indicates the change in the nature of predominant positron trapping sites. Beyond 425[Formula: see text]C, [Formula: see text], [Formula: see text]-parameter and [Formula: see text]-parameter starts decreasing and around 650[Formula: see text]C, [Formula: see text] and [Formula: see text]-parameter approached almost the bulk value showing the annealing out of radiation-induced defects.

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Gamma radiation-induced defects in KCl, MgCl2, and ZnCl2 salts at room temperature

Physical Chemistry Chemical Physics ◽

10.1039/d1cp00520k ◽

2021 ◽

Author(s):

Alejandro Ramos-Ballesteros ◽

Ruchi Gakhar ◽

Gregory P. Horne ◽

Kazuhiro Iwamatsu ◽

James F. Wishart ◽

...

Keyword(s):

Gamma Radiation ◽

Gamma Irradiation ◽

Room Temperature ◽

Diffuse Reflectance ◽

Post Irradiation ◽

Radiation Induced ◽

Induced Defects

Room temperature post-irradiation measurements of diffuse reflectance and EPR spectroscopies were made to characterize the long-lived radiation-induced species formed upon gamma irradiation (up to 100 kGy) of solid KCl, MgCl2, and ZnCl2 salts.

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