Engineering of domain wall propagation in magnetic microwires with graded magnetic anisotropy

The influence of magnetic anisotropy, post-processing conditions, and defects on the domain wall (DW) dynamics of amorphous and nanocrystalline Fe-, Ni-, and Co-rich microwires with spontaneous and annealing-induced magnetic bistability has been thoroughly analyzed, with an emphasis placed on the influence of magnetoelastic, induced and magnetocrystalline anisotropies. Minimizing magnetoelastic anisotropy, either by the selection of a chemical composition with a low magnetostriction coefficient or by heat treatment, is an appropriate route for DW dynamics optimization in magnetic microwires. Stress-annealing allows further improvement of DW velocity and hence is a promising method for optimization of DW dynamics in magnetic microwires. The origin of current-driven DW propagation in annealing-induced magnetic bistability is attributed to magnetostatic interaction of outer domain shell with transverse magnetization orientation and inner axially magnetized core. The beneficial influence of the stress-annealing on DW dynamics has been explained considering that it allows increasing of the volume of outer domain shell with transverse magnetization orientation at the expense of decreasing the radius of inner axially magnetized core. Such transverse magnetic anisotropy can similarly affect the DW dynamics as the applied transverse magnetic field and hence is beneficial for DW dynamics optimization. Stress-annealing allows designing the magnetic anisotropy distribution more favorable for the DW dynamics improvement. Results on DW dynamics in various families of nanocrystalline microwires are provided. The role of saturation magnetization on DW mobility improvement is discussed. The DW shape, its correlation with the magnetic anisotropy constant and the microwire diameter, as well as manipulation of the DW shape by induced magnetic anisotropy are discussed. The engineering of DW propagation through local stress-annealing and DW collision is demonstrated.

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Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

MRS Proceedings ◽

10.1557/proc-777-t6.4 ◽

2003 ◽

Vol 777 ◽

Cited By ~ 2

Author(s):

T. Devolder ◽

M. Belmeguenai ◽

C. Chappert ◽

H. Bernas ◽

Y. Suzuki

Keyword(s):

Domain Wall ◽

Magnetic Anisotropy ◽

Magnetization Reversal ◽

Ion Irradiation ◽

Magnetic Nanostructures ◽

Magnetic Storage ◽

Exchange Field ◽

Static Magnetization ◽

Specific Domain ◽

Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

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Subsystem domination influence on magnetization reversal in designed magnetic patterns in ferrimagnetic Tb/Co multilayers

Scientific Reports ◽

10.1038/s41598-020-80004-x ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Łukasz Frąckowiak ◽

Feliks Stobiecki ◽

Gabriel David Chaves-O’Flynn ◽

Maciej Urbaniak ◽

Marek Schmidt ◽

...

Keyword(s):

Domain Wall ◽

Magnetization Reversal ◽

Domain Walls ◽

Compensation Point ◽

Relative Sign ◽

Reversal Process ◽

Effective Magnetization ◽

Domain Wall Propagation ◽

Characteristic Features ◽

Magnetization Reversal Process

AbstractRecent results showed that the ferrimagnetic compensation point and other characteristic features of Tb/Co ferrimagnetic multilayers can be tailored by He+ ion bombardment. With appropriate choices of the He+ ion dose, we prepared two types of lattices composed of squares with either Tb or Co domination. The magnetization reversal of the first lattice is similar to that seen in ferromagnetic heterostructures consisting of areas with different switching fields. However, in the second lattice, the creation of domains without accompanying domain walls is possible. These domain patterns are particularly stable because they simultaneously lower the demagnetizing energy and the energy associated with the presence of domain walls (exchange and anisotropy). For both lattices, studies of magnetization reversal show that this process takes place by the propagation of the domain walls. If they are not present at the onset, the reversal starts from the nucleation of reversed domains and it is followed by domain wall propagation. The magnetization reversal process does not depend significantly on the relative sign of the effective magnetization in areas separated by domain walls.

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