High-throughput characterization of local conductivity of Nd0.9Ca0.1Ba2Cu3O7−δ thin film by the low-temperature scanning microwave microscope

2006 ◽  
Vol 252 (7) ◽  
pp. 2615-2621 ◽  
Author(s):  
Sohei Okazaki ◽  
Noriaki Okazaki ◽  
Xiaoru Zhao ◽  
Hidetaka Sugaya ◽  
Sei-ichiro Yaginuma ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Throughput ◽  
Microwave Microscope ◽  
Local Conductivity ◽  
Temperature Scanning

Development of Variable Temperature Scanning Microwave Microscope for High Throughput Materials Characterization

2005 ◽  
Vol 894 ◽  
Author(s):  
Noriaki Okazaki ◽  
Sohei Okazaki ◽  
Ryota Takahashi ◽  
Makoto Murakami ◽  
Parhat Ahmet ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
High Throughput ◽  
Variable Temperature ◽  
Combinatorial Libraries ◽  
Materials Characterization ◽  
Easy Method ◽  
Coaxial Cavity ◽  
Microwave Microscope ◽  
Temperature Scanning

AbstractWe developed a variable-temperature scanning microwave microscope (VT-SμM) that can perform high-throughput materials characterization in the temperature range between 4K and room temperature. As a sensor probe we used a high-Q coaxial cavity resonator, which was mounted on the low-temperature stage to allow variable-temperature measurements. We carried out systematic studies on the thermal degradation of the conducting polymers using the combinatorial libraries of polyaniline and polythiophene thin films, which showed rapid decrease of conductivity above 300C and 250C, respectively. The low-temperature performance of the VT-SμM was demonstrated by the measurement of composition-spread Nd1-xSrxMnO3 thin film, for which we succeeded in detecting the clear metal-insulator transition at 100K. We also propose a simple and easy method for the quantitative analysis of conductive thin films, by using the standard composition-spread thin films of Ti1-xNbxO2.

Development of Scanning Microwave Microscope for High-Throughput Characterization of Combinatorial Dielectric Thin Film

2001 ◽  
Vol 700 ◽  
Author(s):  
Noriaki Okazaki ◽  
Parhat Ahmet ◽  
Toyohiro Chikyow ◽  
Hiroyuki Odagawa ◽  
Yasuo Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Frequency Shift ◽  
High Throughput ◽  
Accurate Determination ◽  
Dielectric Materials ◽  
Dielectric Thin Film ◽  
Outer Conductor ◽  
Microwave Microscope

AbstractA scanning microwave microscope (Sm M) for high-throughput characterization of combinatorial dielectric materials has been developed using a lumped constant resonator probe. The probe consists of a microwave oscillator module equipped with a thin conducting needle and an outer conductor ring, which detects the dielectric constant of the sample just beneath the needle as a frequency shift of the resonator. The quantitative analysis of the dielectric constant for the bulk and the thin-film samples was carried out based on the measurement of gap-length dependence of the frequency shift. The analysis method was successfully applied to the characterization of composition-spread BaxSr1-xTiO3 thin film sample. The evaluation of far-field contribution to the frequency shift was found to be crucial for the accurate determination of dielectric constant especially in the characterization of combinatorial thin films.

Combinatorial Fabrication and High-Throughput Characterization of Thin Film Metal Oxide Libraries for Solar water Splitting

2018 ◽  
Author(s):  
Alfred Ludwig ◽  
Mona Nowak ◽  
Swati Kumari ◽  
Helge S. Stein ◽  
Ramona Gutkowski ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Water Splitting ◽  
High Throughput ◽  
Solar Water ◽  
Solar Water Splitting

The Characterization of Bottom-gate Thin Film Transistors adapted Nanocrystalline Silicon as Active Layer by Catalytic CVD at Low Temperature

2019 ◽  
Vol 25 (3) ◽  
pp. 259-262
Author(s):  
Youn-Jin Lee ◽  
Kyoung-Min Lee ◽  
Jae-Dam Hwang ◽  
Kil-Sun No ◽  
Kap Soo Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Bottom Gate ◽  
Catalytic Cvd
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