Optical emission spectroscopy investigation of sputtering discharge used for SiOxNy thin films deposition and correlation with the film composition

2006 ◽  
Vol 252 (15) ◽  
pp. 5611-5614 ◽  
Author(s):  
F. Rebib ◽  
E. Tomasella ◽  
L. Thomas ◽  
J. Cellier ◽  
T. Sauvage ◽  
...  
Keyword(s):  
Thin Films ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Film Composition

Manufacturable Large Area CdS Thin Films for Solar Cell Applications Monitored with Optical Emission Spectroscopy

1999 ◽  
Vol 569 ◽  
Author(s):  
L. Wang ◽  
I. Eisgruber ◽  
R. Hollingsworth ◽  
C. DeHart ◽  
T. Wangensteen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Deposition Rate ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
High Efficiency ◽  
Accurate Determination ◽  
Complex Function ◽  
Optical Emission ◽  
Cds Thin Films

ABSTRACTManufacturable, sputtered, device-quality, CdS thin films are reported for high efficiency solar cell applications. The sputtering plasma is monitored during deposition using optical emission spectroscopy. Optical emission spectroscopy (OES) is commonly used as an end point detector in plasma etching processes, where the disappearance of the etch product wavelength signature provides an unambiguous indication of completion. OES is only now beginning to be examined for controlling deposition processes, primarily because the dependence between OES signal and film properties can frequently be a quite complex function of the electron and gas densities, the emitting species concentration, the electron impact excitation cross section, the electron energy distribution function, and the probability of inelastic collisions between plasma species. OES monitoring during CdS sputtering allows accurate determination of deposition rate. Both Cd and S emission peaks can be identified, allowing tracking of the results of preferential sputtering. The OES output has been tied directly into the chamber controls, resulting in automatic closed-loop control of deposition rate. The resulting CdS films are device-quality and well-suited to large-scale manufacturing. A photovoltaic efficiency of 12.1 % was obtained from sputtered CdS on CIGS absorber, compared to 12.9% for the traditional, but less manufacturable, chemical bath deposited CdS on the same batch of CIGS. The sputtering technique has many advantages over other deposition techniques, such as easy scaleablity to large areas, simple process control, compatibility with in-line manufacturing of layered devices and low cost. RF, or lower-cost pulsed DC, sputtering power supplies can be used with comparable deposition rates. The structure, optical, and electrical properties of the sputtered CdS thin films have been characterized.

scholarly journals Quantitative Analysis of Thin Films by dc Arc Optical Emission Spectroscopy

1978 ◽  
Vol 32 (3) ◽  
pp. 281-287 ◽  
Author(s):  
Arnold W. Hogrefe ◽  
Robert K. Lowry
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Aluminum Film ◽  
Gravimetric Analysis ◽  
Mixed Powder ◽  
Nickel Chromium ◽  
Dc Arc

dc arc optical emission spectroscopy was investigated as a quantitative method for measuring compositions of thin films commonly used in fabricating semiconductor devices. Thin films studied were nickel-chromium, phosphorus-silicon dioxide, and silicon-aluminum. Film samples were obtained by direct deposition onto ordinary graphite electrodes mounted in vacuum deposition chambers. Standards for each film were prepared by evaporating series of synthetic solutions approximating film compositions onto electrode tips, or by preparing appropriately weighed mixed powder standards. Calibration curves were established by burning multiple sets of these standard electrodes in a 15-A dc arc and plotting the intensity ratios for selected atomic lines of the analyte elements. Correlation of emission results with atomic absorption, electron microprobe, and gravimetric analysis showed absolute agreement to within ±3% for nickel-chromium, ± 0.3% for phosphorus-silicon dioxide, and ±0.2% for silicon-aluminum. Maximum relative percent error was 5, 10, and 12.5%, respectively. This technique has proved to be a rapid convenient process control tool in the manufacture of microelectronic devices.

Correlation Between In Situ Optical Emission Spectroscopy in a Reactive O2 / AR RF Magnetron Sputtering Discharge and PZT Thin Film Composition

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Ayguavives ◽  
P. Aubert ◽  
B. Ea-Kim ◽  
B. Agius
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Film Composition

ABSTRACTLead zirconate titanate (PZT) thin films have been grown by rf magnetron sputtering on Si substrates from a metallic target of nominal composition Pb1.1(Zr0.4 Ti0.6 in a reactive argon / oxygen gas mixture. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements show clearly a correlation between the evolution of characteristic atomic emission line intensities (Zr - 386.4 nm, Ti - 399.9 nm, Pb - 405.8 nm and O - 777.2 nm) and the thin-film composition determined by a simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA).

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