Characteristics of N-doped TiO2 thin films grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering

2009 ◽  
Vol 255 (22) ◽  
pp. 9149-9153 ◽  
Author(s):  
Z.G. Li ◽  
S. Miyake
2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.


2011 ◽  
Vol 520 (1) ◽  
pp. 272-279 ◽  
Author(s):  
M. Horprathum ◽  
P. Eiamchai ◽  
P. Chindaudom ◽  
N. Nuntawong ◽  
V. Patthanasettakul ◽  
...  

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