Plasma-Enhanced Reactive Magnetron Sputtering Assisted with Inductively Coupled Plasma for Reactivity-Controlled Deposition of Microcrystalline Silicon Thin Films

2013 ◽  
Vol 52 (11S) ◽  
pp. 11NB05 ◽  
Author(s):  
Kosuke Takenaka ◽  
Yuichi Setsuhara ◽  
Akinori Ebe
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Inductively Coupled Plasma ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films ◽  
Controlled Deposition

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

2013 ◽  
Vol 113 (20) ◽  
pp. 203505 ◽  
Author(s):  
Y. N. Guo ◽  
D. Y. Wei ◽  
S. Q. Xiao ◽  
S. Y. Huang ◽  
H. P. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films

Enhanced Crystallinity of Microcrystalline Silicon Thin Films Using Deuterium in Reactive Magnetron Sputter Deposition at 230°C

1998 ◽  
Vol 507 ◽  
Author(s):  
J. E. Gerbi ◽  
P. Voyles ◽  
J. M. Gibson ◽  
O J. R. Abelson
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Process ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Partial Pressures ◽  
Magnetron Sputter Deposition ◽  
Enhanced Crystallinity

ABSTRACTWe analyze the formation kinetics and microstructure of hydrogenated vs. deuterated microcrystalline (μc-Si:H or D) thin films using real-time spectroscopic ellipsometry, post- deposition thermal hydrogen evolution, and TEM. The films are deposited by reactive magnetron sputtering of a silicon target in Ar (1.65 mT) with added partial pressures of H2or D2(0-5.5mT) on Coming 7059 glass substrates at 230°C. Amorphous films are deposited when PH2=0. When hydrogen is added to the chamber, the reactive magnetron sputtering process generates a flux of fast neutral H which promotes stc-Si growth. The substitution of D for H varies the kinetics of hydrogen reflection from the target and implantation into the growing film. We analyze the amorphous to microcrystalline transition as a function of the isotope (H2or D2) and pressure used in the deposition process. We find that the films enter the microcrystalline regime at lower D2pressures than H2pressures. Furthermore, the <ε2> data determined by ellipsometry have a different shape for deuterated films, compared to hydrogenated films at similar growth pressures. This indicates changes in band structure which we interpret as evidence for enhanced crystallinity.

scholarly journals The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering

2001 ◽  
Vol 82-84 ◽  
pp. 637-644 ◽  
Author(s):  
M.Fátima Cerqueira ◽  
Maria Losurdo ◽  
M.V. Stepikhova ◽  
Olinda Conde ◽  
M.M. Giangregorio ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Silicon Thin Films ◽  
Erbium Doped
Sign in / Sign up

Export Citation Format

Share Document