Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)

2011 ◽  
Vol 257 (8) ◽  
pp. 3320-3324 ◽  
Author(s):  
Su Kong Chong ◽  
Boon Tong Goh ◽  
Zarina Aspanut ◽  
Muhamad Rasat Muhamad ◽  
Chang Fu Dee ◽  
...  
2001 ◽  
Vol 664 ◽  
Author(s):  
B. Stannowski ◽  
M.K. van Veen ◽  
R.E.I. Schropp

ABSTRACTWe present thin-film transistors with both amorphous silicon and silicon nitride deposited by hot-wire chemical vapor deposition. Hot-wire amorphous silicon with good electrical properties was deposited from the decomposition of silane at a substrate temperature of 250°C. For Hot-wire silicon nitride we used silane and ammonia at a substrate temperature of 340°C. In this paper we address structural and electrical properties of this material. A high ammonia flow results in porous films that exhibit post-deposition oxidation. By limiting the ammonia/silane ratio to 30, compact layers with a hydrogen content of only 10 at.% and a refractive index of 1.95 are obtained. Using this layer as gate dielectric results in thin-film transistors with good switching behavior and a field-effect mobility of 0.3 cm2/Vs.


2013 ◽  
Vol 532 ◽  
pp. 84-88 ◽  
Author(s):  
D.A. Spee ◽  
M.R. Schipper ◽  
C.H.M. van der Werf ◽  
J.K. Rath ◽  
R.E.I. Schropp

2008 ◽  
Vol 47 (1) ◽  
pp. 566-568 ◽  
Author(s):  
Takahiro Kida ◽  
Yohei Nagasaka ◽  
Takuya Sakurai ◽  
Tomohiko Yamakami ◽  
Rinpei Hayashibe ◽  
...  

2011 ◽  
Vol 520 (1) ◽  
pp. 74-78 ◽  
Author(s):  
Su Kong Chong ◽  
Boon Tong Goh ◽  
Zarina Aspanut ◽  
Muhamad Rasat Muhamad ◽  
Binni Varghese ◽  
...  

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

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